P

Inventor

NAKAJIMA KENTARO

JP47 patents
⚠️ This page may combine multiple inventors who share the name “NAKAJIMA KENTARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

38 patents
US6751074B2Jun 15, 2004

Magnetic memory having antiferromagnetically coupled recording layer

TOSHIBA KK83 citations99
US6611405B1Aug 26, 2003

Magnetoresistive element and magnetic memory device

TOSHIBA KK185 citations99
US6473336B2Oct 29, 2002

Magnetic memory device

TOSHIBA KK152 citations99
US6995962B2Feb 7, 2006

Ferromagnetic double tunnel junction element with asymmetric energy band

TOSHIBA KK114 citations98
US6522573B2Feb 18, 2003

Solid-state magnetic memory using ferromagnetic tunnel junctions

TOSHIBA KK89 citations98
US6381171B1Apr 30, 2002

Magnetic element, magnetic read head, magnetic storage device, magnetic memory device

TOSHIBA KK114 citations98
US6965138B2Nov 15, 2005

Magnetic memory device and method of manufacturing the same

TOSHIBA KK59 citations96
US6653703B2Nov 25, 2003

Semiconductor memory device using magneto resistive element and method of manufacturing the same

TOSHIBA KK36 citations96
US6605836B2Aug 12, 2003

Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information

TOSHIBA KK64 citations96
US6556473B2Apr 29, 2003

Magnetic memory with reduced write current

TOSHIBA KK74 citations96
US7345852B2Mar 18, 2008

Magnetoresistive element and magnetic memory device

TOSHIBA KK21 citations93
US7291506B2Nov 6, 2007

Magnetic memory device and method of manufacturing the same

TOSHIBA KK16 citations93
US7038894B2May 2, 2006

Magnetoresistive element and magnetic memory device

TOSHIBA KK18 citations93
US6987653B2Jan 17, 2006

Magnetoresistive element and magnetic memory device

TOSHIBA KK29 citations93
US6730949B2May 4, 2004

Magnetoresistance effect device

TOSHIBA KK32 citations93
US6707711B2Mar 16, 2004

Magnetic memory with reduced write current

TOSHIBA KK22 citations93
US6590803B2Jul 8, 2003

Magnetic memory device

TOSHIBA KK45 citations93
US6590244B2Jul 8, 2003

Semiconductor memory device using magneto resistive effect element

TOSHIBA KK49 citations93
US7035137B2Apr 25, 2006

Semiconductor memory device having memory cells including ferromagnetic films and control method thereof

TOSHIBA KK27 citations92
US7593193B2Sep 22, 2009

Magnetoresistive element and magnetic memory device

TOSHIBA KK8 citations84
US7376003B2May 20, 2008

Magnetic random access memory

TOSHIBA KK9 citations84
US6868002B2Mar 15, 2005

Magnetic memory with reduced write current

TOSHIBA KK12 citations84
US7140096B2Nov 28, 2006

Method of manufacturing a magnetoresistance effect device

TOSHIBA KK7 citations74
US7050325B2May 23, 2006

Magnetic random access memory

TOSHIBA KK9 citations74
US6984867B2Jan 10, 2006

Magnetic memory device

TOSHIBA KK9 citations74
US6916677B2Jul 12, 2005

Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof

TOSHIBA KK10 citations74
US6914284B2Jul 5, 2005

Magnetic memory device and method of manufacturing the same

TOSHIBA KK8 citations74
US6803619B2Oct 12, 2004

Semiconductor memory device

TOSHIBA KK9 citations74
US7405087B2Jul 29, 2008

Magnetic memory device and method of manufacturing the same

TOSHIBA KK2 citations63
US7209382B2Apr 24, 2007

Magnetic random access memory

TOSHIBA KK5 citations63
US6947312B2Sep 20, 2005

MRAM having SAL layer

TOSHIBA KK2 citations63
US6884633B2Apr 26, 2005

Semiconductor memory device using magneto resistive element and method of manufacturing the same

TOSHIBA KK1 citations63
US6828641B2Dec 7, 2004

Semiconductor memory device using magneto resistive element and method of manufacturing the same

TOSHIBA KK1 citations63
US11879753B2Jan 23, 2024

Sensor and sensor module

TOSHIBA KK0 citations52
US7123539B2Oct 17, 2006

Memory modules with magnetoresistive elements and method of reading data from row or column directions

TOSHIBA KK1 citations52
US6934196B2Aug 23, 2005

Memory module with magnetoresistive elements and a method of reading data from in-row and in-column directions

TOSHIBA KK0 citations52
US6919595B2Jul 19, 2005

Semiconductor memory device

TOSHIBA KK0 citations52
US6812511B2Nov 2, 2004

Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof

TOSHIBA KK1 citations52

TERUMO CORP

5 patents

HIOKI ELECTRIC WORKS

2 patents

TOKYO SHIBAURA ELECTRIC CO

1 patent

KAO CORP

1 patent