Inventor
KISHI TATSUYA
JP130 patents
⚠️ This page may combine multiple inventors who share the name “KISHI TATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
39 patentsUS6751074B2Jun 15, 2004
Magnetic memory having antiferromagnetically coupled recording layer
TOSHIBA KK83 citations99
US6611405B1Aug 26, 2003
Magnetoresistive element and magnetic memory device
TOSHIBA KK185 citations99
US6069820AMay 30, 2000
Spin dependent conduction device
TOSHIBA KK151 citations99
US8009465B2Aug 30, 2011
Magnetoresistive element
TOSHIBA KK55 citations98
US7768824B2Aug 3, 2010
Magnetoresistive element and magnetoresistive random access memory including the same
TOSHIBA KK58 citations98
US7663197B2Feb 16, 2010
Magnetoresistive element
TOSHIBA KK97 citations98
US7596015B2Sep 29, 2009
Magnetoresistive element and magnetic memory
TOSHIBA KK94 citations98
US6995962B2Feb 7, 2006
Ferromagnetic double tunnel junction element with asymmetric energy band
TOSHIBA KK114 citations98
US6937447B2Aug 30, 2005
Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory
TOSHIBA KK82 citations98
US6765824B2Jul 20, 2004
Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory
TOSHIBA KK127 citations98
US6605836B2Aug 12, 2003
Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information
TOSHIBA KK64 citations96
US6556473B2Apr 29, 2003
Magnetic memory with reduced write current
TOSHIBA KK74 citations96
US8363462B2Jan 29, 2013
Magnetoresistive element
TOSHIBA KK21 citations93
US8036025B2Oct 11, 2011
Magnetoresistive element
TOSHIBA KK33 citations93
US8014193B2Sep 6, 2011
Magnetoresistance effect element and magnetic random access memory
TOSHIBA KK41 citations93
US7957184B2Jun 7, 2011
Magnetoresistive element and magnetoresistive random access memory including the same
TOSHIBA KK17 citations93
US7924607B2Apr 12, 2011
Magnetoresistance effect element and magnetoresistive random access memory using the same
TOSHIBA KK38 citations93
US7920361B2Apr 5, 2011
Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc
TOSHIBA KK23 citations93
US7518907B2Apr 14, 2009
Magnetoresistive element
TOSHIBA KK15 citations93
US7355884B2Apr 8, 2008
Magnetoresistive element
TOSHIBA KK28 citations93
US7345852B2Mar 18, 2008
Magnetoresistive element and magnetic memory device
TOSHIBA KK21 citations93
US7190613B2Mar 13, 2007
Magnetic random access memory device having thermal agitation property and high write efficiency
TOSHIBA KK47 citations93
US7038894B2May 2, 2006
Magnetoresistive element and magnetic memory device
TOSHIBA KK18 citations93
US7038939B2May 2, 2006
Magneto-resistance effect element and magnetic memory
TOSHIBA KK32 citations93
US7023725B2Apr 4, 2006
Magnetic memory
TOSHIBA KK32 citations93
US6987653B2Jan 17, 2006
Magnetoresistive element and magnetic memory device
TOSHIBA KK29 citations93
US6960815B2Nov 1, 2005
Magnetic memory device having yoke layer, and manufacturing method thereof
TOSHIBA KK29 citations93
US6949779B2Sep 27, 2005
Magnetoresistive element and magnetic memory
TOSHIBA KK39 citations93
US6950334B2Sep 27, 2005
Magnetic random access memory having test circuit and test method therefor
TOSHIBA KK28 citations93
US6927468B2Aug 9, 2005
Magnetic random access memory
TOSHIBA KK24 citations93
US6909130B2Jun 21, 2005
Magnetic random access memory device having high-heat disturbance resistance and high write efficiency
TOSHIBA KK35 citations93
US6879515B2Apr 12, 2005
Magnetic memory device having yoke layer
TOSHIBA KK23 citations93
US6879475B2Apr 12, 2005
Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic head
TOSHIBA KK18 citations93
US6797536B2Sep 28, 2004
Magnetic memory device having yoke layer, and manufacturing method
TOSHIBA KK29 citations93
US6730949B2May 4, 2004
Magnetoresistance effect device
TOSHIBA KK32 citations93
US6717845B2Apr 6, 2004
Magnetic memory
TOSHIBA KK33 citations93
US6707711B2Mar 16, 2004
Magnetic memory with reduced write current
TOSHIBA KK22 citations93
US6590803B2Jul 8, 2003
Magnetic memory device
TOSHIBA KK45 citations93
US7240419B2Jul 10, 2007
Method of manufacturing a magnetoresistance effect element
TOSHIBA KK14 citations92
YOSHIKAWA MASATOSHI
3 patentsUS8716818B2May 6, 2014
Magnetoresistive element and method of manufacturing the same
YOSHIKAWA MASATOSHI49 citations93
US8139405B2Mar 20, 2012
Magnetoresistive element and magnetoresistive random access memory including the same
YOSHIKAWA MASATOSHI13 citations92
US9570671B2Feb 14, 2017
Magnetic memory device
YOSHIKAWA MASATOSHI5 citations84
NAGASE TOSHIHIKO
2 patentsTOKYO SHIBAURA ELECTRIC CO
2 patentsNAKAYAMA MASAHIKO
1 patentKITAGAWA EIJI
1 patentOZEKI JYUNICHI
1 patentTOSHIBA MEMORY CORP
1 patentShowing the top 50 of 130 patents by PatentIndex Score.