Inventor
DOERING ROBERT R
US21 patents
Patents
21 patentsUS4830978AMay 16, 1989
Dram cell and method
TEXAS INSTRUMENTS INC65 citations96
US5334548AAug 2, 1994
High performance composed pillar dRAM cell
TEXAS INSTRUMENTS INC74 citations95
US5106776AApr 21, 1992
Method of making high performance composed pillar dRAM cell
TEXAS INSTRUMENTS INC56 citations95
US5103276AApr 7, 1992
High performance composed pillar dram cell
TEXAS INSTRUMENTS INC43 citations95
US4882649ANov 21, 1989
Nitride/oxide/nitride capacitor dielectric
TEXAS INSTRUMENTS INC58 citations95
US4561170ADec 31, 1985
Method of making field-plate isolated CMOS devices
TEXAS INSTRUMENTS INC65 citations94
US6990035B2Jan 24, 2006
Circuit and method for reducing SRAM standby power
TEXAS INSTRUMENTS INC27 citations92
US5300450AApr 5, 1994
High performance composed pillar DRAM cell
TEXAS INSTRUMENTS INC34 citations92
US5156992AOct 20, 1992
Process for forming poly-sheet pillar transistor DRAM cell
TEXAS INSTRUMENTS INC23 citations92
US4580330AApr 8, 1986
Integrated circuit isolation
TEXAS INSTRUMENTS INC44 citations92
US4561172ADec 31, 1985
Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions
TEXAS INSTRUMENTS INC34 citations92
US4696092ASep 29, 1987
Method of making field-plate isolated CMOS devices
TEXAS INSTRUMENTS INC37 citations91
US4916524AApr 10, 1990
Dram cell and method
TEXAS INSTRUMENTS INC20 citations82
US4677739AJul 7, 1987
High density CMOS integrated circuit manufacturing process
TEXAS INSTRUMENTS INC22 citations81
US4661374AApr 28, 1987
Method of making MOS VLSI semiconductor device with metal gate and clad source/drain
TEXAS INSTRUMENTS INC16 citations74
US10001529B2Jun 19, 2018
Low-offset Graphene Hall sensor
TEXAS INSTRUMENTS INC3 citations73
US5374580ADec 20, 1994
Method of forming high density DRAM having increased capacitance area due to trench etched into storage capacitor region
TEXAS INSTRUMENTS INC13 citations73
US4958206ASep 18, 1990
Diffused bit line trench capacitor dram cell
TEXAS INSTRUMENTS INC9 citations72
US5198383AMar 30, 1993
Method of fabricating a composed pillar transistor DRAM Cell
TEXAS INSTRUMENTS INC19 citations67
US5170234ADec 8, 1992
High density dynamic RAM with trench capacitor
TEXAS INSTRUMENTS INC4 citations62
US4958212ASep 18, 1990
Trench memory cell
TEXAS INSTRUMENTS INC4 citations60