Inventor
MOEN KURT A
US5 patents
Patents
5 patentsUS10062712B1Aug 28, 2018
Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuit
NEWPORT FAB LLC28 citations92
US10319716B2Jun 11, 2019
Substrate isolation for low-loss radio frequency (RF) circuits
NEWPORT FAB LLC5 citations82
US10290631B2May 14, 2019
Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon region
NEWPORT FAB LLC2 citations71
US10325907B2Jun 18, 2019
Substrate isolation for low-loss radio frequency (RF) circuits
NEWPORT FAB LLC1 citations60
US10347625B2Jul 9, 2019
Linearity and lateral isolation in a BiCMOS process through counter-doping of epitaxial silicon region
NEWPORT FAB LLC0 citations50