Inventor

LIN SHIAN-JYH

TW55 patents

⚠️ This page may combine multiple inventors who share the name “LIN SHIAN-JYH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN SHIAN-JYH

NANYA TECHNOLOGY CORP

Method for forming vertical transistor and trench capacitor

Method for forming bottle trenches

Method for fabricating recessed gate MOS transistor device

Method for making a raised vertical channel transistor device

Memory device and fabrication method thereof

Method for forming a bottle-shaped trench

Method for manufacturing single-sided buried strap in semiconductor devices

Method of etching bottle trench and fabricating capacitor with same

Semiconductor device and method of manufacturing the same

Trench capacitor structure

Method for fabricating memory device with recess channel MOS transistor

Fuse array structure

Semiconductor memory device

Semiconductor memory device including decoupling capacitor array arranged overlying one-time programmable device

Method for forming a silicon nitride layer

Method for forming bottle trenches by liquid phase oxide deposition

Method for treating the surface of a deep trench

Method for forming self-aligned contact in semiconductor device

Method of fabricating rugged capacitor of high density DRAMs

Conductive through connection and forming method thereof

Transistor structure and method of making the same

Method for fabricating a recessed-gate MOS transistor device

Metal gate with composite film stack

Method of fabricating a flash memory cell using angled implant

Method of fabricating a trench capacitor of a memory cell

Trench-type semiconductor device structure

Electrical device and method for fabricating the same

Semiconductor memory device and fabrication method thereof

Electrical device and method for fabricating the same

3-stage method for forming deep trench structure and deep trench capacitor

Semiconductor structure

Method of fabricating MOS transistor by millisecond anneal

Method for fabricating recessed gate MOS transistor device

Method for fabricating a semiconductor device

Fabrication method for an array area and a support area of a dynamic random access memory

Adjustable detection apparatus

Semiconductor memory device including decoupling capacitor array arranged overlying one-time programmable device

Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof

Method for fabricating deep trench DRAM array

Raised vertical channel transistor device

Semiconductor structure and the forming method thereof

Deep trench device with single sided connecting structure and fabrication method thereof

Deep trench device with single sided connecting structure and fabrication method thereof

Method of forming a vertical memory device with a rectangular trench

Method for forming deep trench capacitor with liquid phase deposition oxide as collar oxide

LIN SHIAN-JYH

Method of fabricating a semiconductor device with through substrate via

Semiconductor device with through substrate via

DRAM cell with double-gate fin-FET, DRAM cell array and fabrication method thereof

Semiconductor device capable of reducing influences of adjacent word lines or adjacent transistors and fabricating method thereof

HUANG CHIH-WEI

Method of patterning metal alloy material layer having hafnium and molybdenum