P

Inventor

LEE CHUNG-YUAN

TW51 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHUNG-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NANYA TECHNOLOGY CORP

22 patents
US6576530B1Jun 10, 2003

Method of fabricating shallow trench isolation

NANYA TECHNOLOGY CORP34 citations92
US8343829B2Jan 1, 2013

Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same

NANYA TECHNOLOGY CORP24 citations91
US7994559B2Aug 9, 2011

Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same

NANYA TECHNOLOGY CORP23 citations91
US7633109B2Dec 15, 2009

DRAM structure and method of making the same

NANYA TECHNOLOGY CORP17 citations82
US6977227B2Dec 20, 2005

Method of etching bottle trench and fabricating capacitor with same

NANYA TECHNOLOGY CORP18 citations82
US7316978B2Jan 8, 2008

Method for forming recesses

NANYA TECHNOLOGY CORP8 citations73
US6992021B2Jan 31, 2006

Method for forming a silicon nitride layer

NANYA TECHNOLOGY CORP8 citations73
US6767786B1Jul 27, 2004

Method for forming bottle trenches by liquid phase oxide deposition

NANYA TECHNOLOGY CORP12 citations73
US6403483B1Jun 11, 2002

Shallow trench isolation having an etching stop layer and method for fabricating same

NANYA TECHNOLOGY CORP9 citations70
US7030431B2Apr 18, 2006

Metal gate with composite film stack

NANYA TECHNOLOGY CORP2 citations63
US7795090B2Sep 14, 2010

Electrical device and method for fabricating the same

NANYA TECHNOLOGY CORP3 citations62
US7563686B2Jul 21, 2009

Method for forming a memory device with a recessed gate

NANYA TECHNOLOGY CORP4 citations62
US7446355B2Nov 4, 2008

Electrical device and method for fabricating the same

NANYA TECHNOLOGY CORP2 citations62
US7179748B1Feb 20, 2007

Method for forming recesses

NANYA TECHNOLOGY CORP5 citations62
US7586152B2Sep 8, 2009

Semiconductor structure

NANYA TECHNOLOGY CORP3 citations61
US6818547B2Nov 16, 2004

Dual damascene process

NANYA TECHNOLOGY CORP4 citations57
US7592233B2Sep 22, 2009

Method for forming a memory device with a recessed gate

NANYA TECHNOLOGY CORP0 citations52
US7535045B2May 19, 2009

Checkerboard deep trench dynamic random access memory cell array layout

NANYA TECHNOLOGY CORP0 citations51
US7205075B2Apr 17, 2007

Method of forming a vertical memory device with a rectangular trench

NANYA TECHNOLOGY CORP0 citations49
US6958283B2Oct 25, 2005

Method for fabricating trench isolation

NANYA TECHNOLOGY CORP0 citations49
US8044449B2Oct 25, 2011

Memory device with a length-controllable channel

NANYA TECHNOLOGY CORP0 citations40
US7557012B2Jul 7, 2009

Method for forming surface strap

NANYA TECHNOLOGY CORP0 citations40

UNITED MICROELECTRONICS CORP

16 patents
US5576557ANov 19, 1996

Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits

UNITED MICROELECTRONICS CORP154 citations98
US5182220AJan 26, 1993

CMOS on-chip ESD protection circuit and semiconductor structure

UNITED MICROELECTRONICS CORP116 citations98
US5698458ADec 16, 1997

Multiple well device and process of manufacture

UNITED MICROELECTRONICS CORP67 citations96
US5541801AJul 30, 1996

Low-voltage gate trigger SCR (LVGTSCR) ESD protection circuit for input and output pads

UNITED MICROELECTRONICS CORP74 citations96
US5473169ADec 5, 1995

Complementary-SCR electrostatic discharge protection circuit

UNITED MICROELECTRONICS CORP78 citations96
US5289334AFeb 22, 1994

CMOS on-chip ESD protection circuit and semiconductor structure

UNITED MICROELECTRONICS CORP44 citations96
US5571737ANov 5, 1996

Metal oxide semiconductor device integral with an electro-static discharge circuit

UNITED MICROELECTRONICS CORP22 citations92
US9455202B2Sep 27, 2016

Mask set and method for fabricating semiconductor device by using the same

UNITED MICROELECTRONICS CORP11 citations83
US5858826AJan 12, 1999

Method of making a blanket N-well structure for SRAM data stability in P-type substrates

UNITED MICROELECTRONICS CORP13 citations74
US5985709ANov 16, 1999

Process for fabricating a triple-well structure for semiconductor integrated circuit devices

UNITED MICROELECTRONICS CORP11 citations72
US6046079AApr 4, 2000

Method for prevention of latch-up of CMOS devices

UNITED MICROELECTRONICS CORP5 citations63
US5998832ADec 7, 1999

Metal oxide semiconductor device for an electro-static discharge circuit

UNITED MICROELECTRONICS CORP5 citations63
US9935099B2Apr 3, 2018

Semiconductor device

UNITED MICROELECTRONICS CORP0 citations51
US10056493B2Aug 21, 2018

Semiconductor device

UNITED MICROELECTRONICS CORP0 citations50
US9887293B2Feb 6, 2018

Semiconductor device

UNITED MICROELECTRONICS CORP0 citations50
US11862421B1Jan 2, 2024

Trim circuit for e-fuse

UNITED MICROELECTRONICS CORP0 citations47

INOTERA MEMORIES INC

6 patents

LEE TZUNG HAN

1 patent

HUANG CHIH-WEI

1 patent

LAN YUAN KU

1 patent

LEE TZUNG-HAN

1 patent

CHEN HSIN-HUEI

1 patent

CHEN CHIEN WEI

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.