Inventor
LEE CHUNG-YUAN
TW51 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHUNG-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NANYA TECHNOLOGY CORP
22 patentsUS6576530B1Jun 10, 2003
Method of fabricating shallow trench isolation
NANYA TECHNOLOGY CORP34 citations92
US8343829B2Jan 1, 2013
Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same
NANYA TECHNOLOGY CORP24 citations91
US7994559B2Aug 9, 2011
Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same
NANYA TECHNOLOGY CORP23 citations91
US7633109B2Dec 15, 2009
DRAM structure and method of making the same
NANYA TECHNOLOGY CORP17 citations82
US6977227B2Dec 20, 2005
Method of etching bottle trench and fabricating capacitor with same
NANYA TECHNOLOGY CORP18 citations82
US7316978B2Jan 8, 2008
Method for forming recesses
NANYA TECHNOLOGY CORP8 citations73
US6992021B2Jan 31, 2006
Method for forming a silicon nitride layer
NANYA TECHNOLOGY CORP8 citations73
US6767786B1Jul 27, 2004
Method for forming bottle trenches by liquid phase oxide deposition
NANYA TECHNOLOGY CORP12 citations73
US6403483B1Jun 11, 2002
Shallow trench isolation having an etching stop layer and method for fabricating same
NANYA TECHNOLOGY CORP9 citations70
US7030431B2Apr 18, 2006
Metal gate with composite film stack
NANYA TECHNOLOGY CORP2 citations63
US7795090B2Sep 14, 2010
Electrical device and method for fabricating the same
NANYA TECHNOLOGY CORP3 citations62
US7563686B2Jul 21, 2009
Method for forming a memory device with a recessed gate
NANYA TECHNOLOGY CORP4 citations62
US7446355B2Nov 4, 2008
Electrical device and method for fabricating the same
NANYA TECHNOLOGY CORP2 citations62
US7179748B1Feb 20, 2007
Method for forming recesses
NANYA TECHNOLOGY CORP5 citations62
US7586152B2Sep 8, 2009
Semiconductor structure
NANYA TECHNOLOGY CORP3 citations61
US6818547B2Nov 16, 2004
Dual damascene process
NANYA TECHNOLOGY CORP4 citations57
US7592233B2Sep 22, 2009
Method for forming a memory device with a recessed gate
NANYA TECHNOLOGY CORP0 citations52
US7535045B2May 19, 2009
Checkerboard deep trench dynamic random access memory cell array layout
NANYA TECHNOLOGY CORP0 citations51
US7205075B2Apr 17, 2007
Method of forming a vertical memory device with a rectangular trench
NANYA TECHNOLOGY CORP0 citations49
US6958283B2Oct 25, 2005
Method for fabricating trench isolation
NANYA TECHNOLOGY CORP0 citations49
US8044449B2Oct 25, 2011
Memory device with a length-controllable channel
NANYA TECHNOLOGY CORP0 citations40
US7557012B2Jul 7, 2009
Method for forming surface strap
NANYA TECHNOLOGY CORP0 citations40
UNITED MICROELECTRONICS CORP
16 patentsUS5576557ANov 19, 1996
Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits
UNITED MICROELECTRONICS CORP154 citations98
US5182220AJan 26, 1993
CMOS on-chip ESD protection circuit and semiconductor structure
UNITED MICROELECTRONICS CORP116 citations98
US5698458ADec 16, 1997
Multiple well device and process of manufacture
UNITED MICROELECTRONICS CORP67 citations96
US5541801AJul 30, 1996
Low-voltage gate trigger SCR (LVGTSCR) ESD protection circuit for input and output pads
UNITED MICROELECTRONICS CORP74 citations96
US5473169ADec 5, 1995
Complementary-SCR electrostatic discharge protection circuit
UNITED MICROELECTRONICS CORP78 citations96
US5289334AFeb 22, 1994
CMOS on-chip ESD protection circuit and semiconductor structure
UNITED MICROELECTRONICS CORP44 citations96
US5571737ANov 5, 1996
Metal oxide semiconductor device integral with an electro-static discharge circuit
UNITED MICROELECTRONICS CORP22 citations92
US9455202B2Sep 27, 2016
Mask set and method for fabricating semiconductor device by using the same
UNITED MICROELECTRONICS CORP11 citations83
US5858826AJan 12, 1999
Method of making a blanket N-well structure for SRAM data stability in P-type substrates
UNITED MICROELECTRONICS CORP13 citations74
US5985709ANov 16, 1999
Process for fabricating a triple-well structure for semiconductor integrated circuit devices
UNITED MICROELECTRONICS CORP11 citations72
US6046079AApr 4, 2000
Method for prevention of latch-up of CMOS devices
UNITED MICROELECTRONICS CORP5 citations63
US5998832ADec 7, 1999
Metal oxide semiconductor device for an electro-static discharge circuit
UNITED MICROELECTRONICS CORP5 citations63
US9935099B2Apr 3, 2018
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US10056493B2Aug 21, 2018
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations50
US9887293B2Feb 6, 2018
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations50
US11862421B1Jan 2, 2024
Trim circuit for e-fuse
UNITED MICROELECTRONICS CORP0 citations47
INOTERA MEMORIES INC
6 patentsUS8343871B2Jan 1, 2013
Method for fabricating fine patterns of semiconductor device utilizing self-aligned double patterning
INOTERA MEMORIES INC6 citations71
US9070782B2Jun 30, 2015
Semiconductor structure
INOTERA MEMORIES INC2 citations61
US9000532B2Apr 7, 2015
Vertical PMOS field effect transistor and manufacturing method thereof
INOTERA MEMORIES INC0 citations52
US8772838B2Jul 8, 2014
Semiconductor layout structure
INOTERA MEMORIES INC0 citations52
US9070740B2Jun 30, 2015
Memory unit, memory unit array and method of manufacturing the same
INOTERA MEMORIES INC0 citations40
US9035366B2May 19, 2015
Semiconductor device and manufacturing method therefor
INOTERA MEMORIES INC0 citations40
LEE TZUNG HAN
1 patentHUANG CHIH-WEI
1 patentLAN YUAN KU
1 patentLEE TZUNG-HAN
1 patentCHEN HSIN-HUEI
1 patentCHEN CHIEN WEI
1 patentShowing the top 50 of 51 patents by PatentIndex Score.