Inventor
SUGURO KYOICHI
JP139 patents
⚠️ This page may combine multiple inventors who share the name “SUGURO KYOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
49 patentsUS9613872B2Apr 4, 2017
Method of manufacturing semiconductor device
TOSHIBA KK156 citations99
US6737724B2May 18, 2004
Semiconductor device and method of manufacturing the same
TOSHIBA KK124 citations99
US6482714B1Nov 19, 2002
Semiconductor device and method of manufacturing the same
TOSHIBA KK171 citations99
US6376888B1Apr 23, 2002
Semiconductor device and method of manufacturing the same
TOSHIBA KK175 citations99
US7078776B2Jul 18, 2006
Low threshold voltage semiconductor device
TOSHIBA KK126 citations98
US6770944B2Aug 3, 2004
Semiconductor device having counter and channel impurity regions
TOSHIBA KK121 citations98
US6617226B1Sep 9, 2003
Semiconductor device and method for manufacturing the same
TOSHIBA KK75 citations98
US6541829B2Apr 1, 2003
Semiconductor device and method of manufacturing the same
TOSHIBA KK248 citations98
US6465290B1Oct 15, 2002
Method of manufacturing a semiconductor device using a polymer film pattern
TOSHIBA KK88 citations98
US6346438B1Feb 12, 2002
Method of manufacturing a semiconductor device
TOSHIBA KK91 citations98
US6335534B1Jan 1, 2002
Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
TOSHIBA KK81 citations98
US6100193AAug 8, 2000
Method of manufacturing a semiconductor device
TOSHIBA KK137 citations98
US5731634AMar 24, 1998
Semiconductor device having a metal film formed in a groove in an insulating film
TOSHIBA KK102 citations98
US5719410AFeb 17, 1998
Semiconductor device wiring or electrode
TOSHIBA KK173 citations98
US5592024AJan 7, 1997
Semiconductor device having a wiring layer with a barrier layer
TOSHIBA KK133 citations98
US6939787B2Sep 6, 2005
Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal film
TOSHIBA KK97 citations97
US5903053AMay 11, 1999
Semiconductor device
TOSHIBA KK107 citations97
US5189503AFeb 23, 1993
High dielectric capacitor having low current leakage
TOSHIBA KK128 citations97
US6794286B2Sep 21, 2004
Process for fabricating a metal wiring and metal contact in a semicondutor device
TOSHIBA KK55 citations96
US6614033B2Sep 2, 2003
Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
TOSHIBA KK71 citations96
US6476454B2Nov 5, 2002
Semiconductor device and method of manufacturing the same
TOSHIBA KK74 citations96
US6271573B1Aug 7, 2001
Semiconductor device with gate structure and method of manufacturing the same
TOSHIBA KK74 citations96
US6162741ADec 19, 2000
Semiconductor device and manufacturing method therefor
TOSHIBA KK77 citations96
US6033537AMar 7, 2000
Sputtering target and method of manufacturing a semiconductor device
TOSHIBA KK51 citations96
US5989988ANov 23, 1999
Semiconductor device and method of manufacturing the same
TOSHIBA KK76 citations96
US5907188AMay 25, 1999
Semiconductor device with conductive oxidation preventing film and method for manufacturing the same
TOSHIBA KK82 citations96
US5654237AAug 5, 1997
Method of manufacturing semiconductor device
TOSHIBA KK59 citations96
US5561082AOct 1, 1996
Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide
TOSHIBA KK44 citations96
US5409862AApr 25, 1995
Method for making aluminum single crystal interconnections on insulators
TOSHIBA KK56 citations96
US5316977AMay 31, 1994
Method of manufacturing a semiconductor device comprising metal silicide
TOSHIBA KK56 citations96
US5192714AMar 9, 1993
Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited
TOSHIBA KK50 citations96
US5162263ANov 10, 1992
Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus
TOSHIBA KK101 citations96
US5670808ASep 23, 1997
Metal oxide capacitor with a WNX electrode
TOSHIBA KK50 citations95
US7579231B2Aug 25, 2009
Semiconductor device and method of manufacturing the same
TOSHIBA KK29 citations93
US7179569B2Feb 20, 2007
Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same
TOSHIBA KK24 citations93
US7091114B2Aug 15, 2006
Semiconductor device and method of manufacturing the same
TOSHIBA KK38 citations93
US6881631B2Apr 19, 2005
Method of manufacturing semiconductor device
TOSHIBA KK32 citations93
US6770519B2Aug 3, 2004
Semiconductor manufacturing method using two-stage annealing
TOSHIBA KK24 citations93
US6770402B2Aug 3, 2004
Method for manufacturing a semiconductor device, stencil mask and method for manufacturing the same
TOSHIBA KK24 citations93
US6767796B2Jul 27, 2004
Method of manufacturing semiconductor device and the semiconductor device
TOSHIBA KK23 citations93
US6730581B2May 4, 2004
Semiconductor device and method of manufacture thereof
TOSHIBA KK34 citations93
US6607958B2Aug 19, 2003
Semiconductor device and method of manufacturing the same
TOSHIBA KK40 citations93
US6570169B2May 27, 2003
Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
TOSHIBA KK16 citations93
US6403452B1Jun 11, 2002
Ion implantation method and ion implantation equipment
TOSHIBA KK19 citations93
US6365492B1Apr 2, 2002
Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device
TOSHIBA KK22 citations93
US6335241B1Jan 1, 2002
Semiconductor device and manufacturing method thereof
TOSHIBA KK29 citations93
US6133150AOct 17, 2000
Semiconductor device and method for manufacturing the same
TOSHIBA KK30 citations93
US5721175AFeb 24, 1998
Method of manufacturing a semiconductor device
TOSHIBA KK37 citations93
US5661345AAug 26, 1997
Semiconductor device having a single-crystal metal wiring
TOSHIBA KK35 citations93
TOKYO SHIBAURA ELECTRIC CO
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