Inventor

MIN BYUNG-JUN

KR22 patents

⚠️ This page may combine multiple inventors who share the name “MIN BYUNG-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MIN BYUNG-JUN

SAMSUNG ELECTRONICS CO LTD

Memory device employing NVRAM and flash memory cells

Device and method for generating reference voltage in Ferroelectric Random Access Memory (FRAM)

Flash memory device and flash memory system

Apparatus and method for generating an imprint-stabilized reference voltage for use in a ferroelectric memory device

Redundancy circuit and repair method for a semiconductor memory device

Nonvolatile semiconductor memory device and one-time programming control method thereof

Burn-in test apparatus for BGA packages using forced heat exhaust

Ferroelectric random access memory device and method for driving the same

Socket

Ferroelectric random access memory apparatus and method of driving the same

Semiconductor memory device having RAM and ROM areas

Ferroelectric random access memory device and method of driving the same

Line driver circuit for a semiconductor memory device

Circuits for driving FRAM

Reference voltage generating apparatus for use in a ferroelectric random access memory (FRAM) and a driving method therefor

Ferroelectric memory device and control method thereof

Ferroelectric random access memory device and control method thereof

JEON BYUNG-GIL

Semiconductor and flash memory systems

Multi-chip semiconductor devices having non-volatile memory devices therein

MIN BYUNG JUN

Memory device, systems and devices including a memory device, methods of operating a memory device, and/or methods of operating systems and devices including a memory device

CHOI YONG

PET-MRI combination apparatus

MIN BYUNG-JUN

Nonvolatile memory device using variable resistive element