Inventor

JEON BYUNG-GIL

KR48 patents

⚠️ This page may combine multiple inventors who share the name “JEON BYUNG-GIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JEON BYUNG-GIL

SAMSUNG ELECTRONICS CO LTD

Memory device employing NVRAM and flash memory cells

Methods of operating ferroelectric memory devices having reconfigurable bit lines

Device and method for generating reference voltage in Ferroelectric Random Access Memory (FRAM)

Ferroelectric memory device and data protection method thereof

Ferroelectric RAM device and driving method

Word line driver circuits for use in semiconductor memory and driving method thereof

Ferroelectric memory devices having a plate line control circuit and methods for operating the same

Ferroelectric random access memory (FRAM) device and method for controlling read/write operations thereof

Ferroelectric memory devices having nondestructive read capability and methods of operating same

Flash memory device and flash memory system

Memory device in which memory cells having complementary data are arranged

Sense amplifier circuits using a single bit line input

Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device

Ferroelectric random access memory device and method for operating the same

Non-volatile ferroelectric memory with section plate line drivers and method for accessing the same

Ferroelectric memory devices having reconfigurable bit lines and methods of operating same

Apparatus and method for generating an imprint-stabilized reference voltage for use in a ferroelectric memory device

Redundancy circuit and repair method for a semiconductor memory device

Nonvolatile semiconductor memory device and one-time programming control method thereof

Ferroelectric random access memory device

Redundancy circuit of semiconductor memory device

Nonvolatile ferroelectric random access memory device with segmented plate line scheme and a method for driving a plate line segment therein

Imprint compensation circuit for use in ferroelectric semiconductor memory device

Systems and methods for compensating a buffer for power supply fluctuation

Ferroelectric random access memory device and method for driving the same

Circuit for providing an adjustable reference voltage for long-life ferroelectric random access memory device

Ferroelectric random access memory with a memory with a stable sensing margin

Methods of operating ferroelectric memory devices having reconfigurable bit lines

Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the same

Ferroelectric memory devices having a plate line control circuit

Ferroelectric memory device having a reference voltage generating circuit

Ferroelectric memory devices having a plate line control circuit and methods for operating the same

Ferroelectric memory devices with memory cells in a row connected to different plate lines

Ferroelectric random access memory apparatus and method of driving the same

Semiconductor memory device having RAM and ROM areas

Ferroelectric random access memory device and method of driving the same

Line driver circuit for a semiconductor memory device

Circuits for driving FRAM

Reference voltage generating apparatus for use in a ferroelectric random access memory (FRAM) and a driving method therefor

Ferroelectric memory device and control method thereof

Ferroelectric random access memory device and control method thereof

Antenna module and electronic device including the same

Method and apparatus to control power supply to network device

JEON BYUNG-GIL

Semiconductor and flash memory systems

Multi-chip semiconductor devices having non-volatile memory devices therein

SAMSUNG ELECTRIC

Method for sensing data stored in a ferroelectric random access memory device

NAM SANG-WAN

Non-volatile memory device for detecting progressive error, memory system, and method of operating the non-volatile memory device

JEON BYUNG GIL

Leakage current detection device and nonvolatile memory device having the same