Inventor
WONG LAWRENCE D
US19 patents
⚠️ This page may combine multiple inventors who share the name “WONG LAWRENCE D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
18 patentsUS7115995B2Oct 3, 2006
Structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures
INTEL CORP69 citations97
US6057226AMay 2, 2000
Air gap based low dielectric constant interconnect structure and method of making same
INTEL CORP104 citations97
US7214594B2May 8, 2007
Method of making semiconductor device using a novel interconnect cladding layer
INTEL CORP19 citations92
US6984581B2Jan 10, 2006
Structural reinforcement of highly porous low k dielectric films by ILD posts
INTEL CORP24 citations92
US6846737B1Jan 25, 2005
Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials
INTEL CORP24 citations92
US6734533B2May 11, 2004
Electron-beam treated CDO films
INTEL CORP24 citations92
US6703324B2Mar 9, 2004
Mechanically reinforced highly porous low dielectric constant films
INTEL CORP37 citations92
US6432811B1Aug 13, 2002
Method of forming structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures
INTEL CORP40 citations92
US6083839AJul 4, 2000
Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control
INTEL CORP16 citations92
US6472315B2Oct 29, 2002
Method of via patterning utilizing hard mask and stripping patterning material at low temperature
INTEL CORP24 citations91
US5946601AAug 31, 1999
Unique α-C:N:H/α-C:Nx film liner/barrier to prevent fluorine outdiffusion from α-FC chemical vapor deposition dielectric layers
INTEL CORP52 citations91
US6417098B1Jul 9, 2002
Enhanced surface modification of low K carbon-doped oxide
INTEL CORP29 citations89
US6566757B1May 20, 2003
Stabilization of low dielectric constant film with in situ capping layer
INTEL CORP36 citations87
US7192856B2Mar 20, 2007
Forming dual metal complementary metal oxide semiconductor integrated circuits
INTEL CORP13 citations84
US6593650B2Jul 15, 2003
Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials
INTEL CORP5 citations74
US11522059B2Dec 6, 2022
Metallic sealants in transistor arrangements
INTEL CORP2 citations73
US6284091B1Sep 4, 2001
Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control
INTEL CORP12 citations73
US12532526B2Jan 20, 2026
Metallic sealants in transistor arrangements
INTEL CORP0 citations62