P

Inventor

WONG LAWRENCE D

US19 patents
⚠️ This page may combine multiple inventors who share the name “WONG LAWRENCE D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

18 patents
US7115995B2Oct 3, 2006

Structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures

INTEL CORP69 citations97
US6057226AMay 2, 2000

Air gap based low dielectric constant interconnect structure and method of making same

INTEL CORP104 citations97
US7214594B2May 8, 2007

Method of making semiconductor device using a novel interconnect cladding layer

INTEL CORP19 citations92
US6984581B2Jan 10, 2006

Structural reinforcement of highly porous low k dielectric films by ILD posts

INTEL CORP24 citations92
US6846737B1Jan 25, 2005

Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials

INTEL CORP24 citations92
US6734533B2May 11, 2004

Electron-beam treated CDO films

INTEL CORP24 citations92
US6703324B2Mar 9, 2004

Mechanically reinforced highly porous low dielectric constant films

INTEL CORP37 citations92
US6432811B1Aug 13, 2002

Method of forming structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures

INTEL CORP40 citations92
US6083839AJul 4, 2000

Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control

INTEL CORP16 citations92
US6472315B2Oct 29, 2002

Method of via patterning utilizing hard mask and stripping patterning material at low temperature

INTEL CORP24 citations91
US5946601AAug 31, 1999

Unique α-C:N:H/α-C:Nx film liner/barrier to prevent fluorine outdiffusion from α-FC chemical vapor deposition dielectric layers

INTEL CORP52 citations91
US6417098B1Jul 9, 2002

Enhanced surface modification of low K carbon-doped oxide

INTEL CORP29 citations89
US6566757B1May 20, 2003

Stabilization of low dielectric constant film with in situ capping layer

INTEL CORP36 citations87
US7192856B2Mar 20, 2007

Forming dual metal complementary metal oxide semiconductor integrated circuits

INTEL CORP13 citations84
US6593650B2Jul 15, 2003

Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials

INTEL CORP5 citations74
US11522059B2Dec 6, 2022

Metallic sealants in transistor arrangements

INTEL CORP2 citations73
US6284091B1Sep 4, 2001

Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control

INTEL CORP12 citations73
US12532526B2Jan 20, 2026

Metallic sealants in transistor arrangements

INTEL CORP0 citations62

WONG LAWRENCE D

1 patent