Inventor

HASKELL BENJAMIN A

US32 patents

⚠️ This page may combine multiple inventors who share the name “HASKELL BENJAMIN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HASKELL BENJAMIN A

UNIV CALIFORNIA

Method for improved growth of semipolar (Al,In,Ga,B)N

Technique for the growth of planar semi-polar gallium nitride

Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

Technique for the growth of planar semi-polar gallium nitride

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

Miscut semipolar optoelectronic device

Growth of reduced dislocation density non-polar gallium nitride

Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy

Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

Etching technique for the fabrication of thin (Al, In, Ga)N layers

OSTENDO TECHNOLOGIES INC

Enhanced performance active pixel array and epitaxial growth method for achieving the same

Methods for improving wafer planarity and bonded wafer assemblies made from the methods

Methods for producing composite GaN nanocolumns and light emitting structures made from the methods

Semi-polar III-nitride films and materials and method for making the same

Apparatus and methods to remove unbonded areas within bonded substrates using localized electromagnetic wave annealing

BAKER TROY J

Technique for the growth of planar semi-polar gallium nitride

Lateral growth method for defect reduction of semipolar nitride films

Technique for the growth of planar semi-polar gallium nitride

CHAKRABORTY ARPAN

Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

JAPAN SCIENCE & TECH AGENCY

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

KAEDING JOHN F

Miscut semipolar optoelectronic device

FARRELL JR ROBERT M

Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices

SATO HITOSHI

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

HASKELL BENJAMIN A

Growth of planar, non-polar, group-III nitride films