Inventor
CRAVEN MICHAEL D
US11 patents
⚠️ This page may combine multiple inventors who share the name “CRAVEN MICHAEL D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV CALIFORNIA
7 patentsUS6900070B2May 31, 2005
Dislocation reduction in non-polar gallium nitride thin films
UNIV CALIFORNIA135 citations98
US7220658B2May 22, 2007
Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
UNIV CALIFORNIA105 citations97
US7091514B2Aug 15, 2006
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
UNIV CALIFORNIA70 citations97
US7847293B2Dec 7, 2010
Growth of reduced dislocation density non-polar gallium nitride
UNIV CALIFORNIA10 citations84
US7427555B2Sep 23, 2008
Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
UNIV CALIFORNIA11 citations82
US7982208B2Jul 19, 2011
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
UNIV CALIFORNIA1 citations62
US9893236B2Feb 13, 2018
Non-polar (Al,B,In,Ga)N quantum wells
UNIV CALIFORNIA0 citations51
CRAVEN MICHAEL D
3 patentsUS8188458B2May 29, 2012
Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
CRAVEN MICHAEL D7 citations82
US9039834B2May 26, 2015
Non-polar gallium nitride thin films grown by metalorganic chemical vapor deposition
CRAVEN MICHAEL D1 citations60
US8809867B2Aug 19, 2014
Dislocation reduction in non-polar III-nitride thin films
CRAVEN MICHAEL D1 citations50