Inventor

DENBAARS STEVEN P

US187 patents

⚠️ This page may combine multiple inventors who share the name “DENBAARS STEVEN P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DENBAARS STEVEN P

UNIV CALIFORNIA

Method for deposition of magnesium doped (Al, In, Ga, B)N layers

Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications

Transparent light emitting diodes

Optical designs for high-efficacy white-light emitting diodes

Method for improved growth of semipolar (Al,In,Ga,B)N

Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)

Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)

Technique for the growth of planar semi-polar gallium nitride

Dislocation reduction in non-polar gallium nitride thin films

Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

High quality, semi-insulating gallium nitride and method and system for forming same

Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials

Method of making a vertical cavity laser

Miniature self-pumped monolithically integrated solid state laser

Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices

White, single or multi-color light emitting diodes by recycling guided modes

Transparent light emitting diodes

Standing transparent mirrorless light emitting diode

Transparent mirrorless light emitting diode

Standing transparent mirrorless light emitting diode

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

Defect reduction in the growth of group III nitrides

Lighting emitting diode with light extracted from front and back sides of a lead frame

High light extraction efficiency light emitting diode (LED)

In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N

Technique for the growth of planar semi-polar gallium nitride

Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

High efficiency light emitting diode (LED) with optimized photonic crystal extractor

Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

Packaging technique for the fabrication of polarized light emitting diodes

Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate

Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate

Method for the growth of P-type gallium nitride and its alloys

Enhancement-depletion logic based on Ge mosfets

Ultra-low phase noise GE MOSFETs

Textured phosphor conversion layer light emitting diode

(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method

CREE INC

LED with current confinement structure and surface roughening

Multi element, multi color solid state LED/laser

Multi element, multi color solid state LED/laser

Multi element, multi color solid state LED/laser

JAPAN SCIENCE & TECH AGENCY

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

FELLOWS NATALIE N

Textured phosphor conversion layer light emitting diode

NAKAMURA SHUJI

Transparent light emitting diodes

ZHONG HONG

High light extraction efficiency nitride based light emitting diode by surface roughening

SUPERCONDUCTOR TECH

Apparatus for growing metal oxides using organometallic vapor phase epitaxy

IZA MICHAEL

(Al,In,Ga,B)N device structures on a patterned substrate

RICHARDSON JACOB J

Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays