Inventor

SPECK JAMES S

US122 patents

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SPECK JAMES S

UNIV CALIFORNIA

Method for improved growth of semipolar (Al,In,Ga,B)N

Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)

Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)

Technique for the growth of planar semi-polar gallium nitride

N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor

Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

Miniature self-pumped monolithically integrated solid state laser

Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices

Transparent mirrorless light emitting diode

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

Defect reduction in the growth of group III nitrides

In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N

Technique for the growth of planar semi-polar gallium nitride

Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate

Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate

Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate

Strain-engineered, self-assembled, semiconductor quantum dot lattices

Methods for fabricating III-nitride tunnel junction devices

High light extraction efficiency nitride based light emitting diode by surface roughening

Miscut semipolar optoelectronic device

High efficiency light emitting diode (LED)

Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices

Growth of reduced dislocation density non-polar gallium nitride

Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser

Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)

Method of controlling stress in group-III nitride films deposited on substrates

Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy

White light source employing a III-nitride based laser diode pumping a phosphor

LEE CHUNG HOON

Light emitting device for AC power operation

Light emitting device for AC power operation

Light emitting device for AC power operation

Light emitting device for AC power operation

SORAA INC

Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture

Method for growth of a merged crystal by bonding at least a first and second crystal to an adhesion layer to form a tiled substrate and growing a crystalline composition over said tiled substrate

Large area nitride crystal and method for making it

MARCHAND HUGUES

Method of controlling stress in group-III nitride films deposited on substrates

Field-effect transistor with compositionally graded nitride layer on a silicaon substrate

ZHONG HONG

High light extraction efficiency nitride based light emitting diode by surface roughening

Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices

SATO HITOSHI

Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes

Method for fabrication of semipolar (Al, In, Ga, B)N based light emitting diodes

POBLENZ CHRISTIANE

Ammonothermal method for growth of bulk gallium nitride

SEOUL OPTO DEVICE CO LTD

Light emitting device having a plurality of light emitting cells and method of fabricating the same

SEOUL VIOSYS CO LTD

Light emitting device for AC power operation

IMER BILGE M

Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)

OHTA HIROAKI

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

FEEZELL DANIEL F

Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes

CRAVEN MICHAEL D

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

HIRAI ASAKO

Planar nonpolar m-plane group III nitride films grown on miscut substrates

KAEDING JOHN F

Miscut semipolar optoelectronic device