P

Inventor

PARK HEUNG LAK

US16 patents
⚠️ This page may combine multiple inventors who share the name “PARK HEUNG LAK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

11 patents
US9157730B2Oct 13, 2015

PECVD process

APPLIED MATERIALS INC49 citations97
US9721784B2Aug 1, 2017

Ultra-conformal carbon film deposition

APPLIED MATERIALS INC29 citations93
US9816187B2Nov 14, 2017

PECVD process

APPLIED MATERIALS INC8 citations92
US9458537B2Oct 4, 2016

PECVD process

APPLIED MATERIALS INC12 citations92
US10793954B2Oct 6, 2020

PECVD process

APPLIED MATERIALS INC3 citations84
US10060032B2Aug 28, 2018

PECVD process

APPLIED MATERIALS INC3 citations84
US11613812B2Mar 28, 2023

PECVD process

APPLIED MATERIALS INC2 citations73
US10074534B2Sep 11, 2018

Ultra-conformal carbon film deposition

APPLIED MATERIALS INC5 citations71
US11898249B2Feb 13, 2024

PECVD process

APPLIED MATERIALS INC0 citations62
US10030306B2Jul 24, 2018

PECVD apparatus and process

APPLIED MATERIALS INC1 citations62
US8349741B2Jan 8, 2013

Amorphous carbon deposition method for improved stack defectivity

APPLIED MATERIALS INC0 citations51

HYUNDAI ELECTRONICS IND

2 patents
US5739049AApr 14, 1998

Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate

HYUNDAI ELECTRONICS IND14 citations73
US5918142AJun 29, 1999

Method for fabricating a semiconductor device

HYUNDAI ELECTRONICS IND2 citations62

RAJAGOPALAN NAGARAJAN

1 patent
US8563095B2Oct 22, 2013

Silicon nitride passivation layer for covering high aspect ratio features

RAJAGOPALAN NAGARAJAN11 citations81

YU HANG

1 patent
US8227352B2Jul 24, 2012

Amorphous carbon deposition method for improved stack defectivity

YU HANG13 citations79

HAN XINHAI

1 patent
US8298887B2Oct 30, 2012

High mobility monolithic p-i-n diodes

HAN XINHAI1 citations45