Inventor
GOSSMANN HANS-JOACHIM L
US12 patents
⚠️ This page may combine multiple inventors who share the name “GOSSMANN HANS-JOACHIM L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
6 patentsUS11699570B1Jul 11, 2023
System and method for hi-precision ion implantation
APPLIED MATERIALS INC3 citations69
US11424125B2Aug 23, 2022
Angled ion implant to reduce MOSFET trench sidewall roughness
APPLIED MATERIALS INC0 citations62
US11830739B2Nov 28, 2023
Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions
APPLIED MATERIALS INC0 citations61
US11804537B2Oct 31, 2023
Channeled implants for SiC MOSFET fabrication
APPLIED MATERIALS INC1 citations61
US10483355B2Nov 19, 2019
Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth
APPLIED MATERIALS INC0 citations51
US12247283B2Mar 11, 2025
Method and apparatus for controlled ion implantation
APPLIED MATERIALS INC0 citations48
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC
4 patentsUS10381465B2Aug 13, 2019
Method for fabricating asymmetrical three dimensional device
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations72
US9455196B2Sep 27, 2016
Method for improving fin isolation
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC2 citations58
US9748364B2Aug 29, 2017
Method for fabricating three dimensional device
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC1 citations51
US9455335B2Sep 27, 2016
Techniques for ion implantation of non-planar field effect transistors
VARIAN SEMICONDUCTOR EQUIPMENT ASS INC0 citations51