Inventor
SONG JEONGGYU
KR27 patents
Patents
27 patentsUS11227912B2Jan 18, 2022
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11081338B2Aug 3, 2021
Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations70
US12527013B2Jan 13, 2026
Capacitor, semiconductor device including the same, and method of fabricating capacitor
SAMSUNG ELECTRONICS CO LTD0 citations62
US12513919B2Dec 30, 2025
Method of manufacturing metal nitride film and electronic device including metal nitride film
SAMSUNG ELECTRONICS CO LTD0 citations62
US12349373B2Jul 1, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12068360B2Aug 20, 2024
Capacitor, semiconductor device including the same, and method of fabricating capacitor
SAMSUNG ELECTRONICS CO LTD0 citations62
US11978761B2May 7, 2024
Capacitor, semiconductor device including the same, and method of fabricating capacitor
SAMSUNG ELECTRONICS CO LTD0 citations62
US11810946B2Nov 7, 2023
Integrated circuit device including capacitor with metal nitrate interfacial layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US11798980B2Oct 24, 2023
Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygen
SAMSUNG ELECTRONICS CO LTD0 citations62
US11594592B2Feb 28, 2023
Capacitor, semiconductor device including the same, and method of fabricating capacitor
SAMSUNG ELECTRONICS CO LTD0 citations62
US11424317B2Aug 23, 2022
Method of manufacturing metal nitride film and electronic device including metal nitride film
SAMSUNG ELECTRONICS CO LTD0 citations62
US12414313B2Sep 9, 2025
High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12408353B2Sep 2, 2025
Device with dielectric metal oxide layers and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12324145B2Jun 3, 2025
Semiconductor device with capping conductive layer on an electrode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12276026B2Apr 15, 2025
Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12071690B2Aug 27, 2024
Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US12051717B2Jul 30, 2024
Anti-ferroelectric thin-film structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12034036B2Jul 9, 2024
Semiconductor device and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11935916B2Mar 19, 2024
Dielectric thin-film structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11869926B2Jan 9, 2024
High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11761089B2Sep 19, 2023
Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11665884B2May 30, 2023
Semiconductor device with capping conductive layer on an electrode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11658024B2May 23, 2023
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11569341B2Jan 31, 2023
Dielectric thin-film structure and electronic device including the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US12477757B2Nov 18, 2025
Capacitor, semiconductor device comprising the capacitor, and method of fabricating the capacitor
SAMSUNG ELECTRONICS CO LTD0 citations60
US11728160B2Aug 15, 2023
Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US10867784B2Dec 15, 2020
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50