Inventor

OHNUKI YUKIHIKO

JP21 patents

⚠️ This page may combine multiple inventors who share the name “OHNUKI YUKIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OHNUKI YUKIHIKO

CANON KK

Photoconductive member having light receiving layer of A-(Si-Ge) and N

Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers

Photoconductive member of A-Si(Ge) with nonuniformly distributed nitrogen

Photoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N)

Photoconductive member having amorphous germanium and amorphous silicon regions with nitrogen

Photoconductive member of amorphous germanium and silicon with carbon

Photoconductive member comprising amorphous silicon-germanium and nitrogen

Photoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layer

Photoconductive member

Photoconductive member comprising layer of A-Si/A-Si(Ge)/A-Si(O)

Photoconductive member comprising (SI-GE)-SI and N

Photoconductive member having light receiving layer of a-(Si-Ge) and C

Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant

Photoconductive member of amorphous germanium and silicon with nitrogen

Photoconductive member comprising amorphous germanium, amorphous silicon and nitrogen

Amorphous silicon and germanium photoconductive member containing carbon

Photoconductive member containing amorphous silicon and germanium

Amorphous matrix of silicon and germanium having controlled conductivity

Photoconductive member having a germanium silicon photoconductor

Photoconductive member having a-Ge and a-Si layers with nonuniformly distributed oxygen

SAITOH KEISHI

Photoconductive member having light receiving layer of A-Ge/A-Si and C