Inventor
KOBAYASHI MAKO
JP18 patents
⚠️ This page may combine multiple inventors who share the name “KOBAYASHI MAKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
17 patentsUS6064621AMay 16, 2000
Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement
MITSUBISHI ELECTRIC CORP103 citations98
US5914907AJun 22, 1999
Semiconductor memory device capable of increasing chip yields while maintaining rapid operation
MITSUBISHI ELECTRIC CORP69 citations96
US6700434B2Mar 2, 2004
Substrate bias voltage generating circuit
MITSUBISHI ELECTRIC CORP39 citations92
US6515461B2Feb 4, 2003
Voltage downconverter circuit capable of reducing current consumption while keeping response rate
MITSUBISHI ELECTRIC CORP27 citations92
US6472926B2Oct 29, 2002
Internal voltage generation circuit
MITSUBISHI ELECTRIC CORP49 citations92
US6429729B2Aug 6, 2002
Semiconductor integrated circuit device having circuit generating reference voltage
MITSUBISHI ELECTRIC CORP20 citations92
US6414881B1Jul 2, 2002
Semiconductor device capable of generating internal voltage effectively
MITSUBISHI ELECTRIC CORP45 citations92
US6333669B1Dec 25, 2001
Voltage converting circuit allowing control of current drivability in accordance with operational frequency
MITSUBISHI ELECTRIC CORP27 citations92
US6316985B1Nov 13, 2001
Substrate voltage generating circuit provided with a transistor having a thin gate oxide film and a semiconductor integrated circuit device provided with the same
MITSUBISHI ELECTRIC CORP26 citations92
US6215720B1Apr 10, 2001
High speed operable semiconductor memory device with memory blocks arranged about the center
MITSUBISHI ELECTRIC CORP18 citations92
US6072743AJun 6, 2000
High speed operable semiconductor memory device with memory blocks arranged about the center
MITSUBISHI ELECTRIC CORP35 citations92
US6424134B2Jul 23, 2002
Semiconductor integrated circuit device capable of stably generating internal voltage independent of an external power supply voltage
MITSUBISHI ELECTRIC CORP17 citations84
US6392472B1May 21, 2002
Constant internal voltage generation circuit
MITSUBISHI ELECTRIC CORP20 citations84
US6272034B1Aug 7, 2001
Semiconductor memory device
MITSUBISHI ELECTRIC CORP16 citations84
US6515934B2Feb 4, 2003
Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area
MITSUBISHI ELECTRIC CORP10 citations74
US6337506B2Jan 8, 2002
Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip area
MITSUBISHI ELECTRIC CORP11 citations74
US6331962B1Dec 18, 2001
Semiconductor device including voltage down converter allowing tuning in short period of time and reduction of chip area
MITSUBISHI ELECTRIC CORP8 citations74