Inventor
WILBER WILLIAM D
US21 patents
⚠️ This page may combine multiple inventors who share the name “WILBER WILLIAM D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
US ARMY
14 patentsUS5640042AJun 17, 1997
Thin film ferroelectric varactor
US ARMY369 citations99
US6967621B1Nov 22, 2005
Small low profile antennas using high impedance surfaces and high permeability, high permittivity materials
US ARMY46 citations92
US6160524ADec 12, 2000
Apparatus and method for reducing the temperature sensitivity of ferroelectric microwave devices
US ARMY52 citations92
US6117572ASep 12, 2000
YBCO epitaxial films deposited on substrate and buffer layer compounds in the system Ca2 MeSbO6 where Me=Al, Ga, Sc and In
US ARMY19 citations92
US5814584ASep 29, 1998
Compound in the series A2 MeSbO6 for use as substrates barrier-dielectric layers and passivating layers in high critical temperature superconducting devices
US ARMY25 citations92
US5608282AMar 4, 1997
Piezoelectrically controlled superconducting switch
US ARMY34 citations92
US7192661B1Mar 20, 2007
Rare earth metal compounds for use in high critical temperature thin film super-conducting antennas
US ARMY4 citations73
US7336981B1Feb 26, 2008
Rare earth metal compounds for use in high critical temperature Josephson junctions
US ARMY1 citations62
US6827915B1Dec 7, 2004
Rare earth metal compounds for use in high critical temperature thin film super-conductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrids
US ARMY6 citations62
US6084246AJul 4, 2000
A4 MeSb3 O12 substrates and dielectric/buffer layers for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures
US ARMY2 citations62
US5432313AJul 11, 1995
Target configurations for increasing the size of films prepared by laser ablation
US ARMY2 citations62
US7312182B1Dec 25, 2007
Rare earth metal compounds for use in high critical temperature thin film super-conductors
US ARMY0 citations51
US6328942B1Dec 11, 2001
A4MeSb3O12 compounds for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures
US ARMY0 citations51
US6183715B1Feb 6, 2001
Low polarizability of Sb5+ for use in fabrication of low dielectric constant materials
US ARMY0 citations51