Inventor
ICHINOSE NOBORU
JP28 patents
⚠️ This page may combine multiple inventors who share the name “ICHINOSE NOBORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOHA CO LTD
7 patentsUS6977397B2Dec 20, 2005
Light emitting element and method of making same
KOHA CO LTD51 citations94
US7629615B2Dec 8, 2009
Light emitting element and method of making same
KOHA CO LTD10 citations92
US7608472B2Oct 27, 2009
Light emitting element and method of making same
KOHA CO LTD15 citations92
US7319249B2Jan 15, 2008
Light emitting element and method of making same
KOHA CO LTD17 citations91
US7977673B2Jul 12, 2011
Semiconductor layer with a Ga2O3 system
KOHA CO LTD4 citations62
US9117974B2Aug 25, 2015
Light emitting element and method of making same
KOHA CO LTD0 citations52
US8791466B2Jul 29, 2014
Light emitting element and method of making same
KOHA CO LTD0 citations52
TOKYO SHIBAURA ELECTRIC CO
6 patentsUS4259292AMar 31, 1981
Gas detecting element
TOKYO SHIBAURA ELECTRIC CO34 citations89
US4045764AAug 30, 1977
Gas-sensing material
TOKYO SHIBAURA ELECTRIC CO13 citations72
US4170770AOct 9, 1979
Gas leak-detecting apparatus
TOKYO SHIBAURA ELECTRIC CO11 citations71
US4131479ADec 26, 1978
Transparent ceramics
TOKYO SHIBAURA ELECTRIC CO11 citations69
US3991340ANov 9, 1976
Discharge lamp lighting apparatus including a sintered type oxide negative resistance starting element
TOKYO SHIBAURA ELECTRIC CO3 citations55
US4336163AJun 22, 1982
Oxide negative resistance element
TOKYO SHIBAURA ELECTRIC CO1 citations48
UNIV WASEDA
4 patentsUS7393411B2Jul 1, 2008
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
UNIV WASEDA37 citations94
US7727865B2Jun 1, 2010
Method for controlling conductivity of Ga2O3single crystal
UNIV WASEDA33 citations92
US7713353B2May 11, 2010
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
UNIV WASEDA10 citations84
US7800105B2Sep 21, 2010
Ga2O3 semiconductor device
UNIV WASEDA0 citations52
ICHINOSE NOBORU
4 patentsUS8747553B2Jun 10, 2014
β-Ga2O3 single crystal growing method including crystal growth method
ICHINOSE NOBORU8 citations83
US8262796B2Sep 11, 2012
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
ICHINOSE NOBORU8 citations80
US8674399B2Mar 18, 2014
Semiconductor layer
ICHINOSE NOBORU0 citations51
US8450747B2May 28, 2013
Light emitting element and method of making same
ICHINOSE NOBORU0 citations51
NICHIA KAGAKU KOGYO KK
2 patentsHOKUSHIN CORP
2 patentsUS7060982B2Jun 13, 2006
Fluoride single crystal for detecting radiation, scintillator and radiation detector using the single crystal, and method for detecting radiation
HOKUSHIN CORP5 citations58
US6777609B2Aug 17, 2004
Thermoelectric conversion material and thermoelectric conversion device
HOKUSHIN CORP4 citations58