Inventor
SHIMAMURA KIYOSHI
JP37 patents
⚠️ This page may combine multiple inventors who share the name “SHIMAMURA KIYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOHA CO LTD
10 patentsUS6977397B2Dec 20, 2005
Light emitting element and method of making same
KOHA CO LTD51 citations94
US7629615B2Dec 8, 2009
Light emitting element and method of making same
KOHA CO LTD10 citations92
US7608472B2Oct 27, 2009
Light emitting element and method of making same
KOHA CO LTD15 citations92
US7319249B2Jan 15, 2008
Light emitting element and method of making same
KOHA CO LTD17 citations91
US9634216B2Apr 25, 2017
Light emitting device
KOHA CO LTD2 citations72
US10836961B2Nov 17, 2020
Phosphor, method for manufacturing same, and light-emitting device
KOHA CO LTD1 citations62
US7977673B2Jul 12, 2011
Semiconductor layer with a Ga2O3 system
KOHA CO LTD4 citations62
US9117974B2Aug 25, 2015
Light emitting element and method of making same
KOHA CO LTD0 citations52
US8791466B2Jul 29, 2014
Light emitting element and method of making same
KOHA CO LTD0 citations52
US10340429B2Jul 2, 2019
Light emitting device
KOHA CO LTD0 citations51
UNIV WASEDA
4 patentsUS7393411B2Jul 1, 2008
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
UNIV WASEDA37 citations94
US7727865B2Jun 1, 2010
Method for controlling conductivity of Ga2O3single crystal
UNIV WASEDA33 citations92
US7713353B2May 11, 2010
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
UNIV WASEDA10 citations84
US7800105B2Sep 21, 2010
Ga2O3 semiconductor device
UNIV WASEDA0 citations52
ICHINOSE NOBORU
4 patentsUS8747553B2Jun 10, 2014
β-Ga2O3 single crystal growing method including crystal growth method
ICHINOSE NOBORU8 citations83
US8262796B2Sep 11, 2012
β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
ICHINOSE NOBORU8 citations80
US8674399B2Mar 18, 2014
Semiconductor layer
ICHINOSE NOBORU0 citations51
US8450747B2May 28, 2013
Light emitting element and method of making same
ICHINOSE NOBORU0 citations51
NAT INST FOR MATERIALS SCIENCE
3 patentsUS9617470B2Apr 11, 2017
Optical material used in light-emitting device, optical isolator, and optical processing apparatus, and manufacturing method thereof
NAT INST FOR MATERIALS SCIENCE2 citations73
US9190483B2Nov 17, 2015
AlN single crystal Schottky barrier diode and method of producing the same
NAT INST FOR MATERIALS SCIENCE0 citations50
US9441153B2Sep 13, 2016
UV photoexcited red light-emitting material and light emitting apparatus
NAT INST FOR MATERIALS SCIENCE0 citations41