Inventor
DIP ANTHONY
US40 patents
⚠️ This page may combine multiple inventors who share the name “DIP ANTHONY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
31 patentsUS7994070B1Aug 9, 2011
Low-temperature dielectric film formation by chemical vapor deposition
TOKYO ELECTRON LTD416 citations98
US7816278B2Oct 19, 2010
In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
TOKYO ELECTRON LTD523 citations98
US7205187B2Apr 17, 2007
Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
TOKYO ELECTRON LTD60 citations97
US7910494B2Mar 22, 2011
Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
TOKYO ELECTRON LTD385 citations95
US8043432B2Oct 25, 2011
Atomic layer deposition systems and methods
TOKYO ELECTRON LTD43 citations94
US6799940B2Oct 5, 2004
Removable semiconductor wafer susceptor
TOKYO ELECTRON LTD23 citations92
US6869892B1Mar 22, 2005
Method of oxidizing work pieces and oxidation system
TOKYO ELECTRON LTD43 citations90
US9831099B2Nov 28, 2017
Method and apparatus for multi-film deposition and etching in a batch processing system
TOKYO ELECTRON LTD8 citations84
US7022192B2Apr 4, 2006
Semiconductor wafer susceptor
TOKYO ELECTRON LTD18 citations84
US7776763B2Aug 17, 2010
In-situ formation of oxidized aluminum nitride films
TOKYO ELECTRON LTD9 citations83
US7737051B2Jun 15, 2010
Silicon germanium surface layer for high-k dielectric integration
TOKYO ELECTRON LTD8 citations83
US7468311B2Dec 23, 2008
Deposition of silicon-containing films from hexachlorodisilane
TOKYO ELECTRON LTD17 citations83
US7165011B1Jan 16, 2007
Built-in self test for a thermal processing system
TOKYO ELECTRON LTD11 citations82
US7632354B2Dec 15, 2009
Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
TOKYO ELECTRON LTD9 citations81
US11225716B2Jan 18, 2022
Internally cooled multi-hole injectors for delivery of process chemicals
TOKYO ELECTRON LTD2 citations72
US11781220B2Oct 10, 2023
Multiple zone gas injection for control of gas phase radicals
TOKYO ELECTRON LTD0 citations62
US11469147B2Oct 11, 2022
Gas phase production of radicals for dielectrics
TOKYO ELECTRON LTD0 citations62
US11274370B2Mar 15, 2022
Multiple zone gas injection for control of gas phase radicals
TOKYO ELECTRON LTD0 citations62
US7501349B2Mar 10, 2009
Sequential oxide removal using fluorine and hydrogen
TOKYO ELECTRON LTD5 citations62
US7358194B2Apr 15, 2008
Sequential deposition process for forming Si-containing films
TOKYO ELECTRON LTD5 citations62
US7604841B2Oct 20, 2009
Method for extending time between chamber cleaning processes
TOKYO ELECTRON LTD3 citations61
US12180589B2Dec 31, 2024
Showerhead for process tool
TOKYO ELECTRON LTD0 citations52
US11834745B2Dec 5, 2023
Spatial atomic layer deposition
TOKYO ELECTRON LTD0 citations52
US11417526B2Aug 16, 2022
Multiple patterning processes
TOKYO ELECTRON LTD0 citations52
US7635655B2Dec 22, 2009
Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processing
TOKYO ELECTRON LTD0 citations52
US11823910B2Nov 21, 2023
Systems and methods for improving planarity using selective atomic layer etching (ALE)
TOKYO ELECTRON LTD0 citations51
US7659214B2Feb 9, 2010
Method for growing an oxynitride film on a substrate
TOKYO ELECTRON LTD0 citations51
US7534731B2May 19, 2009
Method for growing a thin oxynitride film on a substrate
TOKYO ELECTRON LTD1 citations51
US7524769B2Apr 28, 2009
Method and system for removing an oxide from a substrate
TOKYO ELECTRON LTD0 citations51
US7405140B2Jul 29, 2008
Low temperature formation of patterned epitaxial Si containing films
TOKYO ELECTRON LTD1 citations51
US7141765B2Nov 28, 2006
Heat treating device
TOKYO ELECTRON LTD1 citations49