Inventor
KIM CHAE HON
KR27 patents
Patents
27 patentsUS9287367B2Mar 15, 2016
Semiconductor device and method of manufacturing the same
SEOUL VIOSYS CO LTD8 citations79
US12356783B2Jul 8, 2025
Light emitting device for display and unit pixel having the same
SEOUL VIOSYS CO LTD3 citations74
US11843076B2Dec 12, 2023
Single chip multi band led and application thereof
SEOUL VIOSYS CO LTD2 citations72
US11621370B2Apr 4, 2023
Single chip multi band led and application thereof
SEOUL VIOSYS CO LTD2 citations72
US11557695B2Jan 17, 2023
Single chip multi band LED
SEOUL VIOSYS CO LTD2 citations72
US9653645B2May 16, 2017
Light emitting diode
SEOUL VIOSYS CO LTD4 citations72
US12514034B2Dec 30, 2025
Light emitting diode and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations62
US12250839B2Mar 11, 2025
Single chip multi band LED and application thereof
SEOUL VIOSYS CO LTD0 citations62
US12027571B2Jul 2, 2024
Light emitting device for display and unit pixel having the same
SEOUL VIOSYS CO LTD0 citations62
US11935990B2Mar 19, 2024
Light emitting diode having side reflection layer
SEOUL VIOSYS CO LTD0 citations62
US11804573B2Oct 31, 2023
Group III-V light emitting diode
SEOUL VIOSYS CO LTD0 citations62
US11631714B2Apr 18, 2023
Light emitting device for display and unit pixel having the same
SEOUL VIOSYS CO LTD0 citations62
US11189755B2Nov 30, 2021
Light emitting diode having side reflection layer
SEOUL VIOSYS CO LTD0 citations62
US12125945B2Oct 22, 2024
Single chip multi band LED
SEOUL VIOSYS CO LTD0 citations61
US12095001B2Sep 17, 2024
Single chip multi band LED
SEOUL VIOSYS CO LTD0 citations61
US9076896B2Jul 7, 2015
Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
SEOUL VIOSYS CO LTD2 citations61
US10749078B2Aug 18, 2020
Light emitting diode having side reflection layer
SEOUL VIOSYS CO LTD0 citations52
US9966497B2May 8, 2018
Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations51
US9853182B2Dec 26, 2017
Gallium nitride-based light emitting diode
SEOUL VIOSYS CO LTD1 citations51
US11658263B2May 23, 2023
Method of fabricating a light emitting device having a stacked structure
SEOUL VIOSYS CO LTD0 citations50
US9966501B2May 8, 2018
Light emitting device with high efficiency
SEOUL VIOSYS CO LTD0 citations50
US9728404B2Aug 8, 2017
Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations50
US9142622B2Sep 22, 2015
Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
SEOUL VIOSYS CO LTD0 citations50
US10559720B2Feb 11, 2020
High-power light-emitting diode and light-emitting module having the same
SEOUL VIOSYS CO LTD0 citations41
US10326050B2Jun 18, 2019
Light-emitting device with improved light extraction efficiency
SEOUL VIOSYS CO LTD0 citations41
US10283675B2May 7, 2019
Vertical light emitting diode having electrode configuration and light emitting diode package having the same
SEOUL VIOSYS CO LTD0 citations41
US9449815B2Sep 20, 2016
Method of growing gallium nitride based semiconductor layers and method of fabricating light emitting device therewith
SEOUL VIOSYS CO LTD0 citations39