Inventor
UETA SHUNSAKU
JP11 patents
Patents
11 patentsUS9777401B2Oct 3, 2017
Method for producing single crystal
SUMITOMO ELECTRIC INDUSTRIES2 citations71
US11913135B2Feb 27, 2024
Silicon carbide substrate and method of manufacturing silicon carbide substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations61
US12116696B2Oct 15, 2024
Silicon carbide substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations59
US11781246B2Oct 10, 2023
Silicon carbide single crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations59
US11535953B2Dec 27, 2022
Silicon carbide single crystal substrate
SUMITOMO ELECTRIC INDUSTRIES1 citations59
US10319821B2Jun 11, 2019
Silicon carbide substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations51
US10184191B2Jan 22, 2019
Method for manufacturing silicon carbide single crystal
SUMITOMO ELECTRIC INDUSTRIES0 citations51
US9631296B2Apr 25, 2017
Method of manufacturing silicon carbide substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations50
US10361273B2Jul 23, 2019
Silicon carbide substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations49
US12227876B2Feb 18, 2025
Silicon carbide single crystal and silicon carbide substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations48
US9777400B2Oct 3, 2017
Method for producing single crystal
SUMITOMO ELECTRIC INDUSTRIES0 citations40