Inventor

CHAMBERS JAMES J

US34 patents

⚠️ This page may combine multiple inventors who share the name “CHAMBERS JAMES J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHAMBERS JAMES J

TEXAS INSTRUMENTS INC

Metal gate MOS transistors and methods for making the same

Process for manufacturing dual work function metal gates in a microelectronics device

High temperature interface layer growth for high-k gate dielectric

High-k gate dielectric with uniform nitrogen profile and methods for making the same

Method for fabricating transistor gate structures and gate dielectrics thereof

Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates

Dual work function metal gate integration in semiconductor devices

Refractory metal-based electrodes for work function setting in semiconductor devices

Structure and method to fabricate self-aligned transistors with dual work function metal gate electrodes

Method for fabricating split gate transistor device having high-k dielectrics

Top surface roughness reduction of high-k dielectric materials using plasma based processes

Hydrogen free integration of high-k gate dielectrics

Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures

Use of indium to define work function of p-type doped polysilicon

Versatile system for triple-gated transistors with engineered corners

Reliable high voltage gate dielectric layers using a dual nitridation process

Reliable high voltage gate dielectric layers using a dual nitridation process

Method for controlling defects in gate dielectrics

Refractory metal-based electrodes for work function setting in semiconductor devices

Low temperature polysilicon oxide process for high-K dielectric/metal gate stack

High-K gate dielectric defect gettering using dopants

Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication

Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication

Formation of uniform silicate gate dielectrics

Defect control in gate dielectrics

Refractory metal-based electrodes for work function setting in semiconductor devices

Versatile system for triple-gated transistors with engineered corners

Use of indium to define work function of p-type doped polysilicon

Cross-contamination control for processing of circuits comprising MOS devices that include metal comprising high-K dielectrics

COLOMBO LUIGI

Semiconductor device fabricated using a metal microstructure control process

Semiconductor device fabricated using a metal microstructure control process

UNIV NORTH CAROLINA STATE

High dielectric constant metal silicates formed by controlled metal-surface reactions

MEHRAD FREIDO

Method for integration of replacement gate in CMOS flow

CHAMBERS JAMES J

Triple-gate transistor with reverse shallow trench isolation