Inventor
ROH KWAN-JONG
KR10 patents
⚠️ This page may combine multiple inventors who share the name “ROH KWAN-JONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS7084061B2Aug 1, 2006
Methods of fabricating a semiconductor device having MOS transistor with strained channel
SAMSUNG ELECTRONICS CO LTD36 citations92
US7781322B2Aug 24, 2010
Nickel alloy salicide transistor structure and method for manufacturing same
SAMSUNG ELECTRONICS CO LTD14 citations83
US7232756B2Jun 19, 2007
Nickel salicide process with reduced dopant deactivation
SAMSUNG ELECTRONICS CO LTD9 citations73
US7375025B2May 20, 2008
Method for forming a metal silicide layer in a semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations61
US8008177B2Aug 30, 2011
Method for fabricating semiconductor device using a nickel salicide process
SAMSUNG ELECTRONICS CO LTD4 citations59
US7932149B2Apr 26, 2011
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations59
US7005373B2Feb 28, 2006
Method for forming a metal silicide layer in a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
US7709340B2May 4, 2010
Semiconductor integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations47
US7569483B2Aug 4, 2009
Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus
SAMSUNG ELECTRONICS CO LTD0 citations41