P

Inventor

SUN MIN-CHUL

KR33 patents
⚠️ This page may combine multiple inventors who share the name “SUN MIN-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

28 patents
US7679083B2Mar 16, 2010

Semiconductor integrated test structures for electron beam inspection of semiconductor wafers

SAMSUNG ELECTRONICS CO LTD105 citations95
US7084061B2Aug 1, 2006

Methods of fabricating a semiconductor device having MOS transistor with strained channel

SAMSUNG ELECTRONICS CO LTD36 citations92
US10014219B2Jul 3, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations84
US9583583B2Feb 28, 2017

Semiconductor device with nanowires in different regions at different heights

SAMSUNG ELECTRONICS CO LTD10 citations84
US9219119B2Dec 22, 2015

Semiconductor device with nanowires in different regions at different heights and fabricating method thereof

SAMSUNG ELECTRONICS CO LTD11 citations84
US7781322B2Aug 24, 2010

Nickel alloy salicide transistor structure and method for manufacturing same

SAMSUNG ELECTRONICS CO LTD14 citations83
US6797559B2Sep 28, 2004

Method of fabricating semiconductor device having metal conducting layer

SAMSUNG ELECTRONICS CO LTD10 citations74
US10615080B2Apr 7, 2020

Methods of manufacturing semiconductor devices by etching active fins using etching masks

SAMSUNG ELECTRONICS CO LTD2 citations73
US9461054B2Oct 4, 2016

Semiconductor devices having vertical device and non-vertical device and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US7232756B2Jun 19, 2007

Nickel salicide process with reduced dopant deactivation

SAMSUNG ELECTRONICS CO LTD9 citations73
US10964782B2Mar 30, 2021

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD1 citations71
US10529801B2Jan 7, 2020

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD3 citations71
US7501651B2Mar 10, 2009

Test structure of semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7307320B2Dec 11, 2007

Differential mechanical stress-producing regions for integrated circuit field effect transistors

SAMSUNG ELECTRONICS CO LTD4 citations63
US12261087B2Mar 25, 2025

Methods of manufacturing semiconductor devices by etching active fins using etching masks and forming source/drain layers on the active fins

SAMSUNG ELECTRONICS CO LTD0 citations62
US11830775B2Nov 28, 2023

Methods of manufacturing semiconductor devices by etching active fins using etching masks

SAMSUNG ELECTRONICS CO LTD0 citations62
US11302585B2Apr 12, 2022

Methods of manufacturing semiconductor devices by etching active fins using etching masks

SAMSUNG ELECTRONICS CO LTD0 citations62
US7465617B2Dec 16, 2008

Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer

SAMSUNG ELECTRONICS CO LTD4 citations62
US7005367B2Feb 28, 2006

Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer

SAMSUNG ELECTRONICS CO LTD2 citations62
US12261200B2Mar 25, 2025

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD0 citations61
US11830911B2Nov 28, 2023

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD0 citations61
US11575002B2Feb 7, 2023

Semiconductor device including isolation regions

SAMSUNG ELECTRONICS CO LTD0 citations61
US7317204B2Jan 8, 2008

Test structure of semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations60
US10109532B2Oct 23, 2018

Methods of manufacturing finFET semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US9634093B2Apr 25, 2017

Method for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US9343549B2May 17, 2016

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7928482B2Apr 19, 2011

Gate structure

SAMSUNG ELECTRONICS CO LTD0 citations51
US7790622B2Sep 7, 2010

Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processes

SAMSUNG ELECTRONICS CO LTD0 citations41

SUN MIN-CHUL

4 patents

IBM

1 patent