Inventor
SUN MIN-CHUL
KR33 patents
⚠️ This page may combine multiple inventors who share the name “SUN MIN-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS7679083B2Mar 16, 2010
Semiconductor integrated test structures for electron beam inspection of semiconductor wafers
SAMSUNG ELECTRONICS CO LTD105 citations95
US7084061B2Aug 1, 2006
Methods of fabricating a semiconductor device having MOS transistor with strained channel
SAMSUNG ELECTRONICS CO LTD36 citations92
US10014219B2Jul 3, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations84
US9583583B2Feb 28, 2017
Semiconductor device with nanowires in different regions at different heights
SAMSUNG ELECTRONICS CO LTD10 citations84
US9219119B2Dec 22, 2015
Semiconductor device with nanowires in different regions at different heights and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD11 citations84
US7781322B2Aug 24, 2010
Nickel alloy salicide transistor structure and method for manufacturing same
SAMSUNG ELECTRONICS CO LTD14 citations83
US6797559B2Sep 28, 2004
Method of fabricating semiconductor device having metal conducting layer
SAMSUNG ELECTRONICS CO LTD10 citations74
US10615080B2Apr 7, 2020
Methods of manufacturing semiconductor devices by etching active fins using etching masks
SAMSUNG ELECTRONICS CO LTD2 citations73
US9461054B2Oct 4, 2016
Semiconductor devices having vertical device and non-vertical device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US7232756B2Jun 19, 2007
Nickel salicide process with reduced dopant deactivation
SAMSUNG ELECTRONICS CO LTD9 citations73
US10964782B2Mar 30, 2021
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD1 citations71
US10529801B2Jan 7, 2020
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD3 citations71
US7501651B2Mar 10, 2009
Test structure of semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7307320B2Dec 11, 2007
Differential mechanical stress-producing regions for integrated circuit field effect transistors
SAMSUNG ELECTRONICS CO LTD4 citations63
US12261087B2Mar 25, 2025
Methods of manufacturing semiconductor devices by etching active fins using etching masks and forming source/drain layers on the active fins
SAMSUNG ELECTRONICS CO LTD0 citations62
US11830775B2Nov 28, 2023
Methods of manufacturing semiconductor devices by etching active fins using etching masks
SAMSUNG ELECTRONICS CO LTD0 citations62
US11302585B2Apr 12, 2022
Methods of manufacturing semiconductor devices by etching active fins using etching masks
SAMSUNG ELECTRONICS CO LTD0 citations62
US7465617B2Dec 16, 2008
Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer
SAMSUNG ELECTRONICS CO LTD4 citations62
US7005367B2Feb 28, 2006
Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layer
SAMSUNG ELECTRONICS CO LTD2 citations62
US12261200B2Mar 25, 2025
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD0 citations61
US11830911B2Nov 28, 2023
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD0 citations61
US11575002B2Feb 7, 2023
Semiconductor device including isolation regions
SAMSUNG ELECTRONICS CO LTD0 citations61
US7317204B2Jan 8, 2008
Test structure of semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations60
US10109532B2Oct 23, 2018
Methods of manufacturing finFET semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9634093B2Apr 25, 2017
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9343549B2May 17, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7928482B2Apr 19, 2011
Gate structure
SAMSUNG ELECTRONICS CO LTD0 citations51
US7790622B2Sep 7, 2010
Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processes
SAMSUNG ELECTRONICS CO LTD0 citations41
SUN MIN-CHUL
4 patentsUS9087922B2Jul 21, 2015
Semiconductor devices having vertical device and non-vertical device and methods of forming the same
SUN MIN-CHUL23 citations91
US8928080B2Jan 6, 2015
Field-effect transistor having back gate and method of fabricating the same
SUN MIN-CHUL1 citations51
US8557691B2Oct 15, 2013
Method of fabricating semiconductor device having buried wiring and related device
SUN MIN-CHUL1 citations51
US8481392B1Jul 9, 2013
Methods of fabricating semiconductor device using high-K layer for spacer etch stop and related devices
SUN MIN-CHUL0 citations40