Inventor
KIM WOONGSUN
US16 patents
⚠️ This page may combine multiple inventors who share the name “KIM WOONGSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
WOLFSPEED INC
13 patentsUS11610991B2Mar 21, 2023
Gate trench power semiconductor devices having improved deep shield connection patterns
WOLFSPEED INC7 citations84
US12279448B2Apr 15, 2025
Trench bottom shielding methods and approaches for trenched semiconductor device structures
WOLFSPEED INC0 citations61
US12176423B2Dec 24, 2024
FinFET power semiconductor devices
WOLFSPEED INC0 citations61
US12094876B2Sep 17, 2024
Conduction enhancement layers for electrical contact regions in power devices
WOLFSPEED INC0 citations61
US12080790B2Sep 3, 2024
Power semiconductor devices including angled gate trenches
WOLFSPEED INC0 citations61
US12009389B2Jun 11, 2024
Edge termination for power semiconductor devices and related fabrication methods
WOLFSPEED INC0 citations61
US11837657B2Dec 5, 2023
Gate trench power semiconductor devices having improved deep shield connection patterns
WOLFSPEED INC0 citations61
US11355630B2Jun 7, 2022
Trench bottom shielding methods and approaches for trenched semiconductor device structures
WOLFSPEED INC0 citations61
US12532488B2Jan 20, 2026
Semiconductor device with selectively grown field oxide layer in edge termination region
WOLFSPEED INC0 citations60
US12376319B2Jul 29, 2025
Support shield structures for trenched semiconductor devices
WOLFSPEED INC1 citations60
US12278284B2Apr 15, 2025
Power semiconductor devices including a trenched gate and methods of forming such devices
WOLFSPEED INC0 citations56
US11640990B2May 2, 2023
Power semiconductor devices including a trenched gate and methods of forming such devices
WOLFSPEED INC0 citations56
US11764295B2Sep 19, 2023
Gate trench power semiconductor devices having improved deep shield connection patterns
WOLFSPEED INC0 citations51