Inventor
CHANG SHIHSHENG
US14 patents
Patents
14 patentsUS11195723B1Dec 7, 2021
Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
TOKYO ELECTRON LTD5 citations82
US11651967B2May 16, 2023
Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etch
TOKYO ELECTRON LTD0 citations61
US11538692B2Dec 27, 2022
Cyclic plasma etching of carbon-containing materials
TOKYO ELECTRON LTD0 citations61
US11227774B2Jan 18, 2022
Methods and systems for etching silicon cyanide (SiCN) with multi-color selectivity
TOKYO ELECTRON LTD0 citations61
US10937659B2Mar 2, 2021
Method of anisotropically etching adjacent lines with multi-color selectivity
TOKYO ELECTRON LTD0 citations61
US12341009B2Jun 24, 2025
Variable hardness amorphous carbon mask
TOKYO ELECTRON LTD0 citations60
US12040176B2Jul 16, 2024
Technologies for high aspect ratio carbon etching with inserted charge dissipation layer
TOKYO ELECTRON LTD0 citations59
US12009211B2Jun 11, 2024
Method for highly anisotropic etching of titanium oxide spacer using selective top-deposition
TOKYO ELECTRON LTD0 citations58
US12588262B2Mar 24, 2026
Sacrificial gate capping layer for gate protection during source/drain contact opening
TOKYO ELECTRON LTD0 citations51
US12568677B2Mar 3, 2026
Method of self-aligned dielectric wall formation for forksheet application
TOKYO ELECTRON LTD0 citations51
US12598932B2Apr 7, 2026
Methods and structures for improving etch profile of underlying layers
TOKYO ELECTRON LTD0 citations50
US12266534B2Apr 1, 2025
Forming a semiconductor device using a protective layer
TOKYO ELECTRON LTD0 citations50
US12237216B2Feb 25, 2025
Method for filling recessed features in semiconductor devices with a low-resistivity metal
TOKYO ELECTRON LTD0 citations50
US11756790B2Sep 12, 2023
Method for patterning a dielectric layer
TOKYO ELECTRON LTD0 citations50