Inventor

BHATTACHARYYA ARUP

US213 patents

⚠️ This page may combine multiple inventors who share the name “BHATTACHARYYA ARUP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BHATTACHARYYA ARUP

MICRON TECHNOLOGY INC

Tantalum lanthanide oxynitride films

Memory cell comprising dynamic random access memory (DRAM) nanoparticles and nonvolatile memory (NVM) nanoparticle

SRAM devices, and electronic systems comprising SRAM devices

Band-engineered multi-gated non-volatile memory device with enhanced attributes

Scalable integrated logic and non-volatile memory

SRAM constructions, and electronic systems comprising SRAM constructions

Integrated DRAM-NVRAM multi-level memory

Scalable flash/NV structures and devices with extended endurance

One transistor SOI non-volatile random access memory cell

Asymmetric band-gap engineered nonvolatile memory device

Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride

Non-volatile devices, and electronic systems comprising non-volatile devices

Decoupling capacitor for high frequency noise immunity

High density NAND non-volatile memory device

Lanthanide dielectric with controlled interfaces

Low power non-volatile memory and gate stack

Scalable integrated logic and non-volatile memory

Memory cell with trenched gated thyristor

One transistor SOI non-volatile random access memory cell

Silicon lanthanide oxynitride films

Gated lateral thyristor-based random access memory cell (GLTRAM)

Asymmetric band-gap engineered nonvolatile memory device

One transistor SOI non-volatile random access memory cell

One-device non-volatile random access memory cell

Electronic systems, constructions for detecting properties of objects, and assemblies for identifying persons

Stable PD-SOI devices and methods

High performance three-dimensional TFT-based CMOS inverters, and computer systems utilizing such novel CMOS inverters

Non-volatile random access memory cells associated with thin film constructions

Memory cell with negative differential resistance

Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection

Hafnium tantalum oxynitride high-k dielectric and metal gates

Hafnium lanthanide oxynitride films

Enhanced multi-bit non-volatile memory device with resonant tunnel barrier

Scalable multi-functional and multi-level nano-crystal non-volatile memory device

Integrated DRAM-NVRAM multi-level memory

Integrated DRAM-NVRAM multi-level memory

Discrete trap non-volatile multi-functional memory device

High performance multi-level non-volatile memory device

Integrated DRAM-NVRAM multi-level memory

Integrated DRAM-NVRAM multi-level memory

Integrated DRAM-NVRAM multi-level memory

Embedded trap direct tunnel non-volatile memory

Methods of forming SRAM constructions

Integrated DRAM-NVRAM multi-level memory

One transistor SOI non-volatile random access memory cell

Methods of forming transistor constructions

IBM

Formation of variable-width sidewall structures

Method for manufacture of ultra-thin film capacitor

Non-volatile memory cell having Si rich silicon nitride charge trapping layer

MIN KYU S

Memory cells containing charge-trapping zones