Inventor

CHOI HAN-MEI

KR58 patents

⚠️ This page may combine multiple inventors who share the name “CHOI HAN-MEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHOI HAN-MEI

SAMSUNG ELECTRONICS CO LTD

Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same

Gate structures of a non-volatile memory device and methods of manufacturing the same

Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics

Nano-structure semiconductor light emitting device

Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same

Method of fabricating a nonvolatile memory device

Integrated circuit devices including electrode support structures and methods of fabricating the same

Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same

Integrated circuit devices with metal-insulator-metal capacitors

Methods of forming capacitors including reducing exposed electrodes in semiconductor devices

Nano-structured semiconductor light-emitting element

Semiconductor devices

Method for cleaning a deposition chamber and deposition apparatus for performing in situ cleaning

Methods of forming dielectric structures and capacitors

Method for forming a multi-layered structure of a semiconductor device and methods for forming a capacitor and a gate insulation layer using the multi-layered structure

Method of fabricating semiconductor device

Method of fabricating trap type nonvolatile memory device

Non-volatile memory device and method of manufacturing the same

Methods of manufacturing a semiconductor device including a dielectric layer including zirconium

Thin film structure, capacitor, and methods for forming the same

Method of forming a metal oxide film

Method of forming a metal oxide film

Semiconductor devices and methods of manufacturing the same

Methods of forming a multi-layered structure using an atomic layer deposition process and methods of forming a capacitor of an integrated circuit device

Layer deposition methods

Methods of forming epitaxial layers

Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same

Method of manufacturing a non-volatile memory device

Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same

Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same

Semiconductor memory device and method of manufacturing the semiconductor memory device

Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor device

Method of manufacturing semiconductor device

Methods of forming flash memory devices including blocking oxide films

Method of manufacturing non-volatile memory device

Methods of forming multilayer dielectric regions using varied deposition parameters

YOO DONG-CHUL

Method for fabricating nonvolatile memory device

Methods of manufacturing a vertical type semiconductor device

Semiconductor integrated circuit device and method of fabricating the same

Memory device and method of fabricating the same

YANG JUN-KYU

Vertical structure non-volatile memory device and method of manufacturing the same

Method of manufacturing semiconductor device

Methods of forming conductive layer patterns using gas phase cleaning process and methods of manufacturing semiconductor devices

CHAE SOO-DOO

Vertical memory devices and methods of manufacturing the same

KIM HYO-JUNG

Methods of manufacturing semiconductor devices

YOON JUN-HO

Method of fabricating semiconductor device

SON YONG HOON

Vertical memory devices and methods of manufacturing the same

KIM HONG-SUK

Method of manufacturing a non-volatile memory device

CHUNG BYUNG-HONG

Method of fabricating nonvolatile memory device

KIM TAE-GON

Method of fabricating semiconductor device having preliminary stacked structure with offset oxide etched using gas cluster ion