P

Inventor

LEE CHANG-HYUN

KR243 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHANG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

22 patents
US6987694B2Jan 17, 2006

Methods of programming non-volatile semiconductor memory devices including coupling voltages and related devices

SAMSUNG ELECTRONICS CO LTD114 citations98
US6894924B2May 17, 2005

Operating a non-volatile memory device

SAMSUNG ELECTRONICS CO LTD74 citations98
US6858906B2Feb 22, 2005

Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers

SAMSUNG ELECTRONICS CO LTD174 citations98
US7253467B2Aug 7, 2007

Non-volatile semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD61 citations97
US6995424B2Feb 7, 2006

Non-volatile memory devices with charge storage insulators

SAMSUNG ELECTRONICS CO LTD46 citations96
US6774433B2Aug 10, 2004

Non-volatile memory device with diffusion layer

SAMSUNG ELECTRONICS CO LTD59 citations96
US7879677B2Feb 1, 2011

Methods of forming FinFETs and nonvolatile memory devices including FinFETs

SAMSUNG ELECTRONICS CO LTD34 citations93
US7714379B2May 11, 2010

SONOS floating trap memory device formed in recess with the lower surface of the conductive gate formed higher that the upper surface of the active region

SAMSUNG ELECTRONICS CO LTD38 citations93
US7495285B2Feb 24, 2009

FinFETs and nonvolatile memory devices including FinFETs

SAMSUNG ELECTRONICS CO LTD23 citations93
US7230294B2Jun 12, 2007

Non-volatile memory devices having a multi-layered charge storage layer and methods of forming the same

SAMSUNG ELECTRONICS CO LTD25 citations93
US7170795B2Jan 30, 2007

Electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage

SAMSUNG ELECTRONICS CO LTD33 citations93
US6818944B2Nov 16, 2004

Nonvolatile memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD23 citations93
US6677200B2Jan 13, 2004

Method of forming non-volatile memory having floating trap type device

SAMSUNG ELECTRONICS CO LTD51 citations93
US7804120B2Sep 28, 2010

Non-volatile semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD15 citations92
US6781193B2Aug 24, 2004

Non-volatile memory device having floating trap type memory cell and method of forming the same

SAMSUNG ELECTRONICS CO LTD31 citations92
US6753572B2Jun 22, 2004

Floating trap-type non-volatile memory device

SAMSUNG ELECTRONICS CO LTD18 citations92
US7924622B2Apr 12, 2011

Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure

SAMSUNG ELECTRONICS CO LTD36 citations91
US7158419B2Jan 2, 2007

Methods of fabricating flash memory devices including multiple dummy cell array regions

SAMSUNG ELECTRONICS CO LTD16 citations91
US8385115B2Feb 26, 2013

Methods of precharging non-volatile memory devices during a programming operation and memory devices programmed thereby

SAMSUNG ELECTRONICS CO LTD28 citations86
US10229258B2Mar 12, 2019

Method and device for providing security content

SAMSUNG ELECTRONICS CO LTD13 citations84
US9905572B2Feb 27, 2018

Vertical memory devices with vertical isolation structures and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US8699274B2Apr 15, 2014

Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasure

SAMSUNG ELECTRONICS CO LTD9 citations84

EHWA DIAMOND IND CO LTD

10 patents

LEE CHANG-HYUN

8 patents

LEE CHANG HYUN

4 patents

HYUNDAI MOTOR CO LTD

2 patents

(unassigned)

1 patent

SAMSUNG ELECTRONICSCO LTD

1 patent

EWHA DIAMOND IND CO LTD

1 patent

KOREA ELECTRIC POWER CORP

1 patent

Showing the top 50 of 243 patents by PatentIndex Score.