P

Inventor

PARK YOUNG-GEUN

KR38 patents
⚠️ This page may combine multiple inventors who share the name “PARK YOUNG-GEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

17 patents
US7482677B2Jan 27, 2009

Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures

SAMSUNG ELECTRONICS CO LTD88 citations98
US7517750B2Apr 14, 2009

Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7354821B2Apr 8, 2008

Methods of fabricating trench capacitors with insulating layer collars in undercut regions

SAMSUNG ELECTRONICS CO LTD10 citations84
US9893142B2Feb 13, 2018

Method for manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations72
US9496328B2Nov 15, 2016

Methods of manufacturing capacitors for semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations72
US11233118B2Jan 25, 2022

Integrated circuit device having dielectric layer, and method and apparatus for manufacturing the integrated circuit device

SAMSUNG ELECTRONICS CO LTD3 citations71
US7927950B2Apr 19, 2011

Method of fabricating trap type nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7635633B2Dec 22, 2009

Non-volatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7531861B2May 12, 2009

Trench capacitors with insulating layer collars in undercut regions

SAMSUNG ELECTRONICS CO LTD3 citations63
US7485585B2Feb 3, 2009

Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7442981B2Oct 28, 2008

Capacitor of semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7361548B2Apr 22, 2008

Methods of forming a capacitor using an atomic layer deposition process

SAMSUNG ELECTRONICS CO LTD4 citations63
US11804518B2Oct 31, 2023

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12328865B2Jun 10, 2025

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US7682906B2Mar 23, 2010

Method of manufacturing a non-volatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7648874B2Jan 19, 2010

Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure

SAMSUNG ELECTRONICS CO LTD0 citations52
US7790591B2Sep 7, 2010

Methods of manufacturing semiconductor devices including metal oxide layers

SAMSUNG ELECTRONICS CO LTD0 citations49

MIRAE CORP

9 patents

PARK YOUNG-GEUN

2 patents

UNIV MICHIGAN REGENTS

2 patents

KOREA INST SCI & TECH

1 patent

ZHAO WEIPING

1 patent

YANG JUN-KYU

1 patent

TYCO ELECTRONICS AMP KOREA CO LTD

1 patent

SONG KEUN SUNG

1 patent

M2N INC

1 patent

PARK YOUNG GEUN

1 patent

TYCO ELECTRONICS AMP KOREA LTD

1 patent