Inventor

KUROI TAKASHI

JP54 patents

⚠️ This page may combine multiple inventors who share the name “KUROI TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUROI TAKASHI

MITSUBISHI ELECTRIC CORP

Semiconductor device and method of manufacturing the same

Semiconductor device and method of fabricating the same

Method for manufacturing an isolation trench having plural profile angles

Semiconductor device and method of manufacturing the same

Semiconductor device with a silicide layer

Semiconductor device and method of fabricating the same

Semiconductor device and manufacturing method thereof

Method of forming a layered wiring structure including titanium silicide

Manufacturing method of a semiconductor device with a silicide layer

Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure

Complementary MOS field effect transistor with tunnel effect means

Method of making a semiconductor device having buried doped and gettering layers

Semiconductor device having crystalline defect isolation regions

Semiconductor device including inversely tapered gate electrode and manufacturing method thereof

Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same

Method of manufacturing semiconductor device

Method of manufacturing semiconductor device

Trench type element isolation structure

Semiconductor device and manufacturing method thereof

Isolation trench having plural profile angles

Semiconductor memory device capable of electrically erasing and writing information and a manufacturing method of the same

Semiconductor device with double structured well

Oxynitride film and its formation method, and method for forming an element isolation oxide film using the oxynitride film

Method of manufacturing semiconductor device isolation region

Method of manufacturing a semiconductor device

Static-type semiconductor memory device

Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layer

Semiconductor device

Method of manufacturing semiconductor device

Semiconductor device and method of fabricating thereof

Method of manufacturing semiconductor device

Method for forming a trench type element isolation structure and trench type element isolation structure

Method of manufacturing a semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method therefor

Method of manufacturing a semiconductor device with double structured well

Semiconductor memory device capable of electrically erasing and writing information

Method of fabricating a bipolar transistor having a high ion concentration buried floating collector

Bipolar transistor having a high ion concentration buried floating collector and method of fabricating the same

Method of manufacturing a semiconductor device

Method of making semiconductor device having a plurality of impurity layers

Semiconductor device having a plurality of impurity layers

Method of forming a trench type element isolation in semiconductor substrate

Method of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layer

Semiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layer

RENESAS TECH CORP

Semiconductor device with element isolation using impurity-doped insulator and oxynitride film

Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same

Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate

Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate

Semiconductor device and manufacturing method thereof