Inventor

HORITA KATSUYUKI

JP47 patents

⚠️ This page may combine multiple inventors who share the name “HORITA KATSUYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HORITA KATSUYUKI

MITSUBISHI ELECTRIC CORP

Semiconductor device and method of manufacturing the same

Method for manufacturing an isolation trench having plural profile angles

Semiconductor device and method of manufacturing the same

Semiconductor device including inversely tapered gate electrode and manufacturing method thereof

Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same

Method of manufacturing semiconductor device

Method of manufacturing semiconductor device

Trench type element isolation structure

Semiconductor device and manufacturing method thereof

Isolation trench having plural profile angles

Method of manufacturing a semiconductor device

Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layer

Semiconductor device

Method of manufacturing semiconductor device

Semiconductor device and method of fabricating thereof

Method for forming a trench type element isolation structure and trench type element isolation structure

Method of manufacturing a semiconductor device

Method of manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

Method of forming a trench type element isolation in semiconductor substrate

Method of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layer

Semiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layer

Semiconductor device and method of manufacturing same

RENESAS TECH CORP

Semiconductor device

Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film

Semiconductor device with element isolation using impurity-doped insulator and oxynitride film

Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same

Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate

Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate

Semiconductor device and manufacturing method thereof

Semiconductor device and its manufacturing method

Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film

Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film

RENESAS ELECTRONICS CORP

Semiconductor device with shallow trench isolation

Semiconductor device including an isolation film buried in a groove

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor device and method of manufacturing the same

SOI SRAM having well regions with opposite conductivity

Semiconductor device and its manufacturing method

Semiconductor device and method of manufacturing the same

HORITA KATSUYUKI

Semiconductor device having well regions with opposite conductivity

Semiconductor device with trench isolation having a diffusion preventing film and manufacturing method thereof

KADOSHIMA MASARU

Method of manufacturing semiconductor device

SHINOHARA HIROFUMI

Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device

ISHIBASHI MASATO

Semiconductor device and manufacturing method thereof