Inventor · disambiguated record
Tomihito Miyazaki
Also filed as: MIYAZAKI TOMIHITO
14 granted patents·9 pending applications·343 citations·filing 1999–2018
91Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES11MIYAZAKI TOMIHITO3HORII TAKU2READ RITE SMI CORP2HARADA SHIN1
Top patents by PatentIndex Score
23 records- 0197US6477019B2Thin film magnetic head including nonmagnetic and magnetic layers with similar milling ratesREAD RITE SMI CORP·Filed 2000·Granted Nov 5, 2002·155 cites·10 claims
- 0296US6729015B2Method of manufacturing a magnetic head deviceREAD RITE SMI CORP·Filed 1999·Granted May 4, 2004·158 cites·13 claims
- 0392US7884393B2High electron mobility transistor, field-effect transistor, and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Feb 8, 2011·14 cites·4 claims
- 0478US7749828B2Method of manufacturing group III Nitride TransistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jul 6, 2010·5 cites·9 claims
- 0571US8581359B2Schottky barrier diodeHORII TAKU·Filed 2008·Granted Nov 12, 2013·5 cites·6 claims
- 0670US8901698B2Schottky barrier diode and method for manufacturing schottky barrier diodeSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Dec 2, 2014·2 cites·14 claims
- 0768US2014138709A1Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 0865US9947782B2Semiconductor device and method for manufacturing sameHARADA SHIN·Filed 2010·Granted Apr 17, 2018·1 cites·11 claims
- 0963US8502337B2Schottky barrier diode and method for manufacturing Schottky barrier diodeHORII TAKU·Filed 2009·Granted Aug 6, 2013·2 cites·12 claims
- 1059US9466675B2Method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 11, 2016·1 cites·9 claims
- 1159US2012091472A1Silicon carbide substrateSASAKI MAKOTO·Filed 2011·Application pending·0 cites
- 1258US10741683B2Semiconductor device and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Aug 11, 2020·0 cites·12 claims
- 1353US8815716B2Method of producing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Aug 26, 2014·0 cites·2 claims
- 1448US8614446B2Semiconductor device and method of producing sameMIYAZAKI TOMIHITO·Filed 2009·Granted Dec 24, 2013·0 cites·3 claims
- 1546US8785301B2Method of cleaning silicon carbide semiconductorWADA KEIJI·Filed 2011·Granted Jul 22, 2014·0 cites·7 claims
- 1644US8987124B2Method of manufacturing Schottky barrier diodeSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Mar 24, 2015·0 cites·5 claims
- 1744US2008044647A1Method for Forming Carbonaceous Material Protrusion and Carbonaceous Material ProtrusionNISHIBAYASHI YOSHIKI·Filed 2005·Application pending·0 cites
- 1843US2010224952A1Schottky barrier diode and method of producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Application pending·0 cites
- 1940US2013109200A1Method for manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 2039US2013045592A1Method for manufacturing silicon carbide semiconductor device and device for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
- 2137US2011309376A1Method of cleaning silicon carbide semiconductor, silicon carbide semiconductor, and silicon carbide semiconductor deviceHIYOSHI TORU·Filed 2011·Application pending·0 cites
- 2232US2012174944A1Cleaning method for silicon carbide semiconductor and cleaning apparatus for silicon carbide semiconductorMIYAZAKI TOMIHITO·Filed 2011·Application pending·0 cites
- 2332US2012178259A1Method of cleaning silicon carbide semiconductor and apparatus for cleaning silicon carbide semiconductorMIYAZAKI TOMIHITO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →