Inventor
FENG ZHIHONG
CN25 patents
⚠️ This page may combine multiple inventors who share the name “FENG ZHIHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION
18 patentsUS10868497B2Dec 15, 2020
Unbalanced terahertz frequency doubler circuit with power handling capacity
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION3 citations66
US11349043B2May 31, 2022
Method for manufacturing tilted mesa and method for manufacturing detector
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations60
US11282977B2Mar 22, 2022
Silicon carbide detector and preparation method therefor
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations60
US11244821B2Feb 8, 2022
Method for preparing isolation area of gallium oxide device
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations60
US11127849B2Sep 21, 2021
Enhancement-mode field effect transistor
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations60
US11183385B2Nov 23, 2021
Method for passivating silicon carbide epitaxial layer
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations53
US12268035B2Apr 1, 2025
Ultraviolet detector and preparation method therefor
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations50
US11456387B2Sep 27, 2022
Normally-off gallium oxide field-effect transistor structure and preparation method therefor
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations50
US11342474B2May 24, 2022
Method for preparing avalanche photodiode
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations49
US11417779B2Aug 16, 2022
Gallium oxide SBD terminal structure and preparation method
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations48
US11189696B2Nov 30, 2021
Method for preparing self-aligned surface channel field effect transistor and power device
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations48
US10388751B2Aug 20, 2019
Semiconductor device and method for forming n-type conductive channel in diamond using heterojunction
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations48
US12112944B2Oct 8, 2024
Preparation method of GaN field effect transistor based on diamond substrate
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations46
US11757048B1Sep 12, 2023
Method for producing gallium oxide Schottky barrier diode with negative beveled angle terminal
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations44
US10985258B2Apr 20, 2021
Method for preparing diamond-based field effect transistor, and corresponding field effect transistor
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations44
US10854741B2Dec 1, 2020
Enhanced HFET
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations39
US10505024B2Dec 10, 2019
Method for preparing cap-layer-structured gallium oxide field effect transistor
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations39
US10804104B2Oct 13, 2020
Semiconductor device and method for forming p-type conductive channel in diamond using abrupt heterojunction
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION0 citations37