Inventor
IM JAE WOO
KR42 patents
⚠️ This page may combine multiple inventors who share the name “IM JAE WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG DISPLAY CO LTD
19 patentsUSD925541SJul 20, 2021
Display module
SAMSUNG DISPLAY CO LTD21 citations94
USD908706SJan 26, 2021
Display module
SAMSUNG DISPLAY CO LTD25 citations94
US11201194B2Dec 14, 2021
Display device
SAMSUNG DISPLAY CO LTD3 citations73
US11119345B2Sep 14, 2021
Display device
SAMSUNG DISPLAY CO LTD2 citations73
US11249716B2Feb 15, 2022
Display device and method for driving the same
SAMSUNG DISPLAY CO LTD4 citations72
US10990139B2Apr 27, 2021
Display device
SAMSUNG DISPLAY CO LTD2 citations72
US10924860B2Feb 16, 2021
Display device
SAMSUNG DISPLAY CO LTD3 citations72
US12445781B2Oct 14, 2025
Display device
SAMSUNG DISPLAY CO LTD0 citations62
US12216825B2Feb 4, 2025
Display device
SAMSUNG DISPLAY CO LTD0 citations62
US11675224B2Jun 13, 2023
Display device
SAMSUNG DISPLAY CO LTD0 citations62
US11678121B2Jun 13, 2023
Display device
SAMSUNG DISPLAY CO LTD0 citations62
US11582543B2Feb 14, 2023
Display device
SAMSUNG DISPLAY CO LTD1 citations62
US11481032B2Oct 25, 2022
Display device
SAMSUNG DISPLAY CO LTD0 citations62
US11355559B2Jun 7, 2022
Display device
SAMSUNG DISPLAY CO LTD0 citations62
US11095984B2Aug 17, 2021
Display device and sound providing method thereof
SAMSUNG DISPLAY CO LTD1 citations62
US11039235B2Jun 15, 2021
Display device
SAMSUNG DISPLAY CO LTD1 citations62
US10935867B2Mar 2, 2021
Bottom member and display device including the same
SAMSUNG DISPLAY CO LTD1 citations62
US10811470B2Oct 20, 2020
Display device
SAMSUNG DISPLAY CO LTD1 citations62
US11490182B2Nov 1, 2022
Display device
SAMSUNG DISPLAY CO LTD0 citations52
SAMSUNG ELECTRONICS CO LTD
18 patentsUS9779833B2Oct 3, 2017
Flash memory device revising program voltage, three-dimensional memory device, memory system including the memory device, and methods of programming the memory device
SAMSUNG ELECTRONICS CO LTD12 citations84
US7426143B2Sep 16, 2008
Semiconductor memory device and related programming method
SAMSUNG ELECTRONICS CO LTD10 citations84
US7161839B2Jan 9, 2007
Non-volatile memory device and program method thereof
SAMSUNG ELECTRONICS CO LTD8 citations74
US6914814B2Jul 5, 2005
Dedicated redundancy circuits for different operations in a flash memory device and methods of operating the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US10684914B2Jun 16, 2020
Memory device and method of controlling ECC operation in the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10067825B2Sep 4, 2018
Memory device and method of controlling ECC operation in the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US7933150B2Apr 26, 2011
Nonvolatile semiconductor memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US7843722B2Nov 30, 2010
Nonvolatile semiconductor memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US7580322B2Aug 25, 2009
High speed programming for nonvolatile memory
SAMSUNG ELECTRONICS CO LTD6 citations63
US7286399B2Oct 23, 2007
Dedicated redundancy circuits for different operations in a flash memory device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7742341B2Jun 22, 2010
Semiconductor memory device and related programming method
SAMSUNG ELECTRONICS CO LTD4 citations62
US11462271B2Oct 4, 2022
Nonvolatile memory device and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations59
US9478295B2Oct 25, 2016
Non-volatile memory device and related method of operation
SAMSUNG ELECTRONICS CO LTD1 citations52
US9305657B2Apr 5, 2016
Non-volatile memory device and related method of operation
SAMSUNG ELECTRONICS CO LTD0 citations52
US7925820B2Apr 12, 2011
Nonvolatile semiconductor memory device and program method therefor
SAMSUNG ELECTRONICS CO LTD1 citations52
US10026473B2Jul 17, 2018
Non-volatile memory device for selectively performing recovery operation and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11443817B2Sep 13, 2022
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations48
US7190619B2Mar 13, 2007
Circuit for indicating termination of scan of bits to be programmed in nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations42
IM JAE-WOO
3 patentsUS8116132B2Feb 14, 2012
Flash memory device configured to switch wordline and initialization voltages
IM JAE-WOO7 citations82
US8477532B2Jul 2, 2013
Flash memory device configured to switch wordline and initialization voltages
IM JAE-WOO1 citations50
US8125839B2Feb 28, 2012
Memory device and method reducing fluctuation of read voltage generated during read while write operation
IM JAE-WOO0 citations50