Inventor
NAM SEUNGGEOL
KR43 patents
Patents
43 patentsUS10790356B2Sep 29, 2020
Semiconductor device including metal-2 dimensional material-semiconductor contact
SAMSUNG ELECTRONICS CO LTD7 citations84
US10217819B2Feb 26, 2019
Semiconductor device including metal-2 dimensional material-semiconductor contact
SAMSUNG ELECTRONICS CO LTD6 citations84
US11342414B2May 24, 2022
Semiconductor device including metal-2 dimensional material-semiconductor contact
SAMSUNG ELECTRONICS CO LTD2 citations73
US11088077B2Aug 10, 2021
Layer structure including diffusion barrier layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11069619B2Jul 20, 2021
Interconnect structure and electronic device employing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10559660B2Feb 11, 2020
Semiconductor device including metal-2 dimensional material-semiconductor contact
SAMSUNG ELECTRONICS CO LTD3 citations73
US10229881B2Mar 12, 2019
Layer structure including diffusion barrier layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US10217513B2Feb 26, 2019
Phase change memory devices including two-dimensional material and methods of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US10134628B2Nov 20, 2018
Multilayer structure including diffusion barrier layer and device including the multilayer structure
SAMSUNG ELECTRONICS CO LTD4 citations73
US11996150B2May 28, 2024
Non-volatile content addressable memory device having simple cell configuration and operating method of the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10850985B2Dec 1, 2020
Method of forming nanocrystalline graphene, and device including nanocrystalline graphene
SAMSUNG ELECTRONICS CO LTD3 citations72
US12119060B2Oct 15, 2024
Content-addressable memory and electronic device including the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US12568660B2Mar 3, 2026
Electronic devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12217958B2Feb 4, 2025
Method of pre-treating substrate and method of directly forming graphene using the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12107140B2Oct 1, 2024
Thin film structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12040360B2Jul 16, 2024
Semiconductor device including metal-2 dimensional material-semiconductor contact
SAMSUNG ELECTRONICS CO LTD0 citations62
US12027589B2Jul 2, 2024
Semiconductor device including graphene and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11984514B2May 14, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11804536B2Oct 31, 2023
Thin film structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11764156B2Sep 19, 2023
Layer structure including diffusion barrier layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11699765B2Jul 11, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11676999B2Jun 13, 2023
Electronic devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US10199469B2Feb 5, 2019
Semiconductor device including metal-semiconductor junction
SAMSUNG ELECTRONICS CO LTD1 citations62
US12538528B2Jan 27, 2026
Semiconductor element and multiplexer including a plurality of semiconductor elements
SAMSUNG ELECTRONICS CO LTD0 citations61
US12382704B2Aug 5, 2025
Semiconductor device and electronic apparatus including the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12218217B2Feb 4, 2025
Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structure
SAMSUNG ELECTRONICS CO LTD0 citations61
US12132109B2Oct 29, 2024
Ferroelectric semiconductor device and method of extracting defect density of the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11799010B2Oct 24, 2023
Transistor including electride electrode
SAMSUNG ELECTRONICS CO LTD0 citations61
US11004949B2May 11, 2021
Transistor including electride electrode
SAMSUNG ELECTRONICS CO LTD0 citations61
US12139814B2Nov 12, 2024
Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
SAMSUNG ELECTRONICS CO LTD0 citations59
US11624127B2Apr 11, 2023
Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
SAMSUNG ELECTRONICS CO LTD1 citations59
US12199165B2Jan 14, 2025
Semiconductor device and electronic apparatus including the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US11572278B2Feb 7, 2023
Method of forming graphene
SAMSUNG ELECTRONICS CO LTD0 citations52
US10790230B2Sep 29, 2020
Layer structure including diffusion barrier layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10727182B2Jul 28, 2020
Layer structure including diffusion barrier layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12527004B2Jan 13, 2026
Nonvolatile memory device and apparatus comprising the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12527038B2Jan 13, 2026
Electronic device including ferroelectric thin film structure
SAMSUNG ELECTRONICS CO LTD0 citations51
US12205951B2Jan 21, 2025
Complementary metal oxide semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11978798B2May 7, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12453106B2Oct 21, 2025
Capacitor device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11149346B2Oct 19, 2021
Method of directly growing carbon material on substrate
SAMSUNG ELECTRONICS CO LTD0 citations50
US10516054B2Dec 24, 2019
Electronic device including two-dimensional material
SAMSUNG ELECTRONICS CO LTD0 citations49
US10840338B2Nov 17, 2020
Semiconductor device including graphene and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations42