Inventor
KAHN MARKUS
DE33 patents
⚠️ This page may combine multiple inventors who share the name “KAHN MARKUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
20 patentsUS10710874B2Jul 14, 2020
Micromechanical structure and method for manufacturing the same
INFINEON TECHNOLOGIES AG9 citations83
US9212045B1Dec 15, 2015
Micro mechanical structure and method for fabricating the same
INFINEON TECHNOLOGIES AG6 citations72
US10629416B2Apr 21, 2020
Wafer chuck and processing arrangement
INFINEON TECHNOLOGIES AG3 citations66
US9257342B2Feb 9, 2016
Methods of singulating substrates to form semiconductor devices using dummy material
INFINEON TECHNOLOGIES AG2 citations62
US11804415B2Oct 31, 2023
Semiconductor device with first and second portions that include silicon and nitrogen
INFINEON TECHNOLOGIES AG0 citations60
US11075134B2Jul 27, 2021
Semiconductor device with a portion including silicon and nitrogen and method of manufacturing
INFINEON TECHNOLOGIES AG0 citations60
US11387081B2Jul 12, 2022
Wafer chuck and processing arrangement
INFINEON TECHNOLOGIES AG0 citations56
US11352253B2Jun 7, 2022
Semiconductor device, microphone and methods for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations54
US10325803B2Jun 18, 2019
Semiconductor wafer and method for processing a semiconductor wafer
INFINEON TECHNOLOGIES AG0 citations51
US9984915B2May 29, 2018
Semiconductor wafer and method for processing a semiconductor wafer
INFINEON TECHNOLOGIES AG0 citations51
US9941111B2Apr 10, 2018
Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer
INFINEON TECHNOLOGIES AG1 citations51
US9741618B2Aug 22, 2017
Methods of forming semiconductor devices
INFINEON TECHNOLOGIES AG0 citations51
US10081533B2Sep 25, 2018
Micromechanical structure and method for fabricating the same
INFINEON TECHNOLOGIES AG1 citations50
US10049879B2Aug 14, 2018
Self aligned silicon carbide contact formation using protective layer
INFINEON TECHNOLOGIES AG0 citations49
US9666482B1May 30, 2017
Self aligned silicon carbide contact formation using protective layer
INFINEON TECHNOLOGIES AG0 citations49
US9478409B2Oct 25, 2016
Method for coating a workpiece
INFINEON TECHNOLOGIES AG0 citations49
US9728480B2Aug 8, 2017
Passivation layer and method of making a passivation layer
INFINEON TECHNOLOGIES AG1 citations45
US10858246B2Dec 8, 2020
Semiconductor device, microphone and methods for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations44
US10106398B2Oct 23, 2018
Micromechanical structure comprising carbon material and method for fabricating the same
INFINEON TECHNOLOGIES AG0 citations40
US9917170B2Mar 13, 2018
Carbon based contact structure for silicon carbide device technical field
INFINEON TECHNOLOGIES AG0 citations40
KAHN MARKUS
4 patentsUS9547833B2Jan 17, 2017
Consistent interface for financial instrument impairment calculation
KAHN MARKUS2 citations63
US9076112B2Jul 7, 2015
Consistent interface for financial instrument impairment expected cash flow analytical result
KAHN MARKUS2 citations52
US9043236B2May 26, 2015
Consistent interface for financial instrument impairment attribute values analytical result
KAHN MARKUS2 citations52
US8150749B2Apr 3, 2012
Systems and methods for general aggregation of characteristics and key figures
KAHN MARKUS0 citations50