P

Inventor

KAHN MARKUS

DE33 patents
⚠️ This page may combine multiple inventors who share the name “KAHN MARKUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

20 patents
US10710874B2Jul 14, 2020

Micromechanical structure and method for manufacturing the same

INFINEON TECHNOLOGIES AG9 citations83
US9212045B1Dec 15, 2015

Micro mechanical structure and method for fabricating the same

INFINEON TECHNOLOGIES AG6 citations72
US10629416B2Apr 21, 2020

Wafer chuck and processing arrangement

INFINEON TECHNOLOGIES AG3 citations66
US9257342B2Feb 9, 2016

Methods of singulating substrates to form semiconductor devices using dummy material

INFINEON TECHNOLOGIES AG2 citations62
US11804415B2Oct 31, 2023

Semiconductor device with first and second portions that include silicon and nitrogen

INFINEON TECHNOLOGIES AG0 citations60
US11075134B2Jul 27, 2021

Semiconductor device with a portion including silicon and nitrogen and method of manufacturing

INFINEON TECHNOLOGIES AG0 citations60
US11387081B2Jul 12, 2022

Wafer chuck and processing arrangement

INFINEON TECHNOLOGIES AG0 citations56
US11352253B2Jun 7, 2022

Semiconductor device, microphone and methods for forming a semiconductor device

INFINEON TECHNOLOGIES AG0 citations54
US10325803B2Jun 18, 2019

Semiconductor wafer and method for processing a semiconductor wafer

INFINEON TECHNOLOGIES AG0 citations51
US9984915B2May 29, 2018

Semiconductor wafer and method for processing a semiconductor wafer

INFINEON TECHNOLOGIES AG0 citations51
US9941111B2Apr 10, 2018

Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer

INFINEON TECHNOLOGIES AG1 citations51
US9741618B2Aug 22, 2017

Methods of forming semiconductor devices

INFINEON TECHNOLOGIES AG0 citations51
US10081533B2Sep 25, 2018

Micromechanical structure and method for fabricating the same

INFINEON TECHNOLOGIES AG1 citations50
US10049879B2Aug 14, 2018

Self aligned silicon carbide contact formation using protective layer

INFINEON TECHNOLOGIES AG0 citations49
US9666482B1May 30, 2017

Self aligned silicon carbide contact formation using protective layer

INFINEON TECHNOLOGIES AG0 citations49
US9478409B2Oct 25, 2016

Method for coating a workpiece

INFINEON TECHNOLOGIES AG0 citations49
US9728480B2Aug 8, 2017

Passivation layer and method of making a passivation layer

INFINEON TECHNOLOGIES AG1 citations45
US10858246B2Dec 8, 2020

Semiconductor device, microphone and methods for forming a semiconductor device

INFINEON TECHNOLOGIES AG0 citations44
US10106398B2Oct 23, 2018

Micromechanical structure comprising carbon material and method for fabricating the same

INFINEON TECHNOLOGIES AG0 citations40
US9917170B2Mar 13, 2018

Carbon based contact structure for silicon carbide device technical field

INFINEON TECHNOLOGIES AG0 citations40

KAHN MARKUS

4 patents

BAUMANN MARCUS

2 patents

SAP SE

2 patents

DENIFL GUENTER

1 patent

SAP AG

1 patent

INFINEON TECHNOLOGIES AUSTRIA AG

1 patent

STRANZL GUDRUN

1 patent

HAAF HERMANN

1 patent