Inventor

GIEWONT KENNETH J

US32 patents

⚠️ This page may combine multiple inventors who share the name “GIEWONT KENNETH J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GIEWONT KENNETH J

GLOBALFOUNDRIES US INC

Edge couplers in the back-end-of-line stack of a photonics chip

Metamaterial edge couplers in the back-end-of-line stack of a photonics chip

Hybrid edge couplers with stacked inverse tapers

Optical components in the back-end-of-line stack of a photonics chip using plural cores vertically stacked

Edge couplers with stacked layering

Demultiplexer and related method to process multiplexed optical inputs

Confining features for mode shaping of lasers and coupling with silicon photonic components

Grating couplers integrated with one or more airgaps

Hybrid edge couplers with layers in multiple levels

Photonics integrated circuit with silicon nitride waveguide edge coupler

Optical device with low-loss thermally tunable closed-curve optical waveguide

Photonics chips with an integrated semiconductor laser

Photonic integrated circuit structure with coupler for interlayer waveguide coupling

Metamaterial edge couplers in the back-end-of-line stack of a photonics chip

Confining features for mode shaping of lasers and coupling with silicon photonic components

Photonic structures including multiple input/output optical couplers

Optical device with low-loss thermally tunable closed-curve optical waveguide

Inductors with airgap electrical isolation

IBM

Method of forming a body contact using BOX modification

Prevention of agglomeration and inversion in a semiconductor polycide process

Capping layer for improved silicide formation in narrow semiconductor structures

Prevention of agglomeration and inversion in a semiconductor salicide process

Controlling internal thermal oxidation and eliminating deep divots in SIMOX by chlorine-based annealing

Method for improved fabrication of salicide structures

Selective salicidation methods

Divot reduction in SIMOX layers

Surface roughness improvement of SIMOX substrates by controlling orientation of angle of starting material

Local metallization and use thereof in semiconductor devices

GLOBALFOUNDRIES INC

Waveguides including a patterned dielectric layer

Bragg gratings with airgap cladding

Interconnect structure with adhesive dielectric layer and methods of forming same

MAXSON JEFFERY B

Local metallization and use thereof in semiconductor devices