Inventor

CHO WONSEOK

KR61 patents

⚠️ This page may combine multiple inventors who share the name “CHO WONSEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHO WONSEOK

SAMSUNG ELECTRONICS CO LTD

Semiconductor devices and methods of fabricating the same

Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devices

Three-dimensional semiconductor memory device and a method of fabricating the same

Three-dimensional semiconductor devices

Semiconductor devices and methods of fabricating the same

Three-dimensional semiconductor device

Three-dimensional semiconductor device and method for fabricating the same

Non-volatile memory device having vertical structure and method of operating the same

3D semiconductor devices and methods of fabricating same

Semiconductor device having selection line stud connected to string selection line

Three-dimensional semiconductor memory device having sidewall and interlayer molds

Three-dimensional semiconductor device and method of fabricating the same

Integrated circuit device including vertical memory

Integrated circuit device including vertical memory

Semiconductor devices and methods of fabricating the same

Semiconductor device having selection line stud connected to string selection line

Vertical memory devices

Semiconductor device and a data storage system including the same

Three-dimensional semiconductor memory device with vertical structures between contact plugs

Integrated circuit device and electronic system including the same

Semiconductor device and electronic system including the same

SAMSUNG SDI CO LTD

Additive, electrolyte for lithium secondary battery and lithium secondary battery including the same

Electrolyte for lithium secondary battery and lithium secondary battery comprising same

Additive, electrolyte for lithium secondary battery comprising same, and lithium secondary battery

Electrolyte solution for lithium secondary battery and lithium secondary battery comprising same

Additive, electrolyte for rechargeable lithium battery, and rechargeable lithium battery including the same

Additive, electrolyte for rechargeable lithium battery and rechargeable lithium battery including the same

Lithium secondary battery comprising electrolyte

Additive, electrolyte for lithium secondary battery and lithium secondary battery including the same

Electrolyte for rechargeable lithium battery and rechargeable lithium battery

Electrolyte of rechargeable lithium battery and rechargeable lithium battery including same

Additive, electrolyte for rechargeable lithium battery, and rechargeable lithium battery

Electrolyte additive for lithium secondary battery, electrolyte for lithium secondary battery including the same, and lithium secondary battery including electrolyte

Electrolyte additive for lithium secondary battery and lithium secondary battery including the same

Elecrolyte additive for lithium secondary battery, electrolyte for lithium secondary battery, and lithium secondary battery including electrolyte

HWANG SUNG-MIN

Methods of manufacturing three-dimensional semiconductor devices and related devices

Three dimensional semiconductor memory devices

Semiconductor device with a pick-up region

Semiconductor device and method of fabricating the same

Three-dimensional semiconductor memory device

SON BYOUNGKEUN

Semiconductor memory device comprising three-dimensional memory cell array

Semiconductor memory device comprising three-dimensional memory cell array

SHIM JAE-JOO

Three-dimensional semiconductor devices

Three-dimensional semiconductor device including a mold structure providing gap regions and an interconnection structure including a plurality of interconnection patterns formed in the gap regions

LEE WOOKHYOUNG

Semiconductor device having staggered pillars

Semiconductor device

PARK SANG-YONG

3D semiconductor devices and methods of fabricating same

SHIM SUNIL

Three-dimensional semiconductor memory device and a method of fabricating the same

KIM DOOGON

Non-volatile memory device having vertical structure and method of operating the same

OH JIN-YONG

Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devices