Inventor
BOZADA CHRISTOPHER A
US12 patents
⚠️ This page may combine multiple inventors who share the name “BOZADA CHRISTOPHER A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
US AIR FORCE
8 patentsUS5976920ANov 2, 1999
Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)
US AIR FORCE28 citations92
US5869364AFeb 9, 1999
Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)
US AIR FORCE46 citations92
US6222210B1Apr 24, 2001
Complementary heterostructure integrated single metal transistor apparatus
US AIR FORCE58 citations91
US6198116B1Mar 6, 2001
Complementary heterostructure integrated single metal transistor fabrication method
US AIR FORCE22 citations91
US6004881ADec 21, 1999
Digital wet etching of semiconductor materials
US AIR FORCE43 citations91
US6020226AFeb 1, 2000
Single layer integrated metal process for enhancement mode field-effect transistor
US AIR FORCE19 citations83
US6066865AMay 23, 2000
Single layer integrated metal enhancement mode field-effect transistor apparatus
US AIR FORCE10 citations72
US6653214B1Nov 25, 2003
Measured via-hole etching
US AIR FORCE3 citations62
US ARMY
3 patentsUS5698900ADec 16, 1997
Field effect transistor device with single layer integrated metal and retained semiconductor masking
US ARMY59 citations95
US5698870ADec 16, 1997
High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
US ARMY47 citations92
US5796131AAug 18, 1998
Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal
US ARMY7 citations73