Inventor
EBEL JOHN L
US18 patents
⚠️ This page may combine multiple inventors who share the name “EBEL JOHN L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
US AIR FORCE
13 patentsUS7381583B1Jun 3, 2008
MEMS RF switch integrated process
US AIR FORCE93 citations96
US7145213B1Dec 5, 2006
MEMS RF switch integrated process
US AIR FORCE92 citations96
US5976920ANov 2, 1999
Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)
US AIR FORCE28 citations92
US5869364AFeb 9, 1999
Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)
US AIR FORCE46 citations92
US6222210B1Apr 24, 2001
Complementary heterostructure integrated single metal transistor apparatus
US AIR FORCE58 citations91
US6198116B1Mar 6, 2001
Complementary heterostructure integrated single metal transistor fabrication method
US AIR FORCE22 citations91
US6004881ADec 21, 1999
Digital wet etching of semiconductor materials
US AIR FORCE43 citations91
US6884717B1Apr 26, 2005
Stiffened backside fabrication for microwave radio frequency wafers
US AIR FORCE42 citations89
US6020226AFeb 1, 2000
Single layer integrated metal process for enhancement mode field-effect transistor
US AIR FORCE19 citations83
US7977137B1Jul 12, 2011
Latching zip-mode actuated mono wafer MEMS switch method
US AIR FORCE12 citations82
US6066865AMay 23, 2000
Single layer integrated metal enhancement mode field-effect transistor apparatus
US AIR FORCE10 citations72
US6653214B1Nov 25, 2003
Measured via-hole etching
US AIR FORCE3 citations62
US7617577B2Nov 17, 2009
Method of forming a low cost digital variable capacitor
US AIR FORCE3 citations61
US ARMY
3 patentsUS5698900ADec 16, 1997
Field effect transistor device with single layer integrated metal and retained semiconductor masking
US ARMY59 citations95
US5698870ADec 16, 1997
High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
US ARMY47 citations92
US5796131AAug 18, 1998
Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal
US ARMY7 citations73