Inventor

IWAMI MASAYUKI

JP17 patents

⚠️ This page may combine multiple inventors who share the name “IWAMI MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IWAMI MASAYUKI

FURUKAWA ELECTRIC CO LTD

GaN based semiconductor element

Vertical type semiconductor device and manufacturing method of the device

Nitride semiconductor device, production method thereof, diode, and field effect transistor

Method for manufacturing nitride semiconductor device

Semiconductor laser device

Semiconductor substrate and semiconductor device, and manufacturing method of semiconductor substrate

Semiconductor device

SATO YOSHIHIRO

Field effect transistor, method of manufacturing field effect transistor, and method of forming groove

Field effect transistor having semiconductor operating layer formed with an inclined side wall

KOKAWA TAKUYA

Semiconductor electronic device having reduced threading dislocation and method of manufacturing the same

Semiconductor electronic device

IWAMI MASAYUKI

Nitride semiconductor device and manufacturing method for the same

Nitride-based compound semiconductor and nitride-based compound semiconductor device

KAYA SHUSUKE

GaN-based semiconductor device and method of manufacturing the same

NIYAMA YUKI

Field effect transistor

IKEDA NARIAKI

Field effect transistor

ADVANCED POWER DEVICE RES ASS

Nitride compound semiconductor device and manufacturing method thereof