Inventor
TAKAURA NORIKATSU
JP49 patents
⚠️ This page may combine multiple inventors who share the name “TAKAURA NORIKATSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
16 patentsUS7470923B2Dec 30, 2008
Semiconductor integrated circuit device
HITACHI LTD17 citations93
US7335907B2Feb 26, 2008
Memory device
HITACHI LTD34 citations93
US9385320B2Jul 5, 2016
Semiconductor storage device and method for manufacturing same
HITACHI LTD4 citations84
US7829930B2Nov 9, 2010
Semiconductor device with ion movement control
HITACHI LTD10 citations84
US6538945B2Mar 25, 2003
Sense amplifiers having reduced Vth deviation
HITACHI LTD17 citations84
US7996735B2Aug 9, 2011
Semiconductor device
HITACHI LTD5 citations74
US7613038B2Nov 3, 2009
Semiconductor integrated circuit device
HITACHI LTD5 citations74
US6399453B2Jun 4, 2002
Process of manufacturing semiconductor integrated circuit device having an amorphous silicon gate
HITACHI LTD13 citations74
US9024284B2May 5, 2015
Superlattice phase change memory including Sb2Te3 layers containing Zr
HITACHI LTD5 citations70
US8841646B2Sep 23, 2014
Semiconductor storage device and method for manufacturing same
HITACHI LTD1 citations63
US7492644B2Feb 17, 2009
Semiconductor integrated circuit device
HITACHI LTD3 citations63
US7057243B2Jun 6, 2006
Hybrid semiconductor device having an n+ (p) doped n-type gate and method of producing the same
HITACHI LTD2 citations63
US6812540B2Nov 2, 2004
Semiconductor integrated circuit device
HITACHI LTD6 citations63
US7767997B2Aug 3, 2010
Semiconductor device with solid electrolyte switching
HITACHI LTD6 citations58
US9153775B2Oct 6, 2015
Semiconductor storage device and method for manufacturing same
HITACHI LTD0 citations52
US7838379B2Nov 23, 2010
Non-volatile memory device and method of manufacturing the same
HITACHI LTD0 citations42
RENESAS TECH CORP
13 patentsUS7126149B2Oct 24, 2006
Phase change memory and phase change recording medium
RENESAS TECH CORP166 citations99
US7489552B2Feb 10, 2009
Semiconductor integrated circuit device
RENESAS TECH CORP60 citations98
US7123535B2Oct 17, 2006
Semiconductor integrated circuit device
RENESAS TECH CORP80 citations98
US6670642B2Dec 30, 2003
Semiconductor memory device using vertical-channel transistors
RENESAS TECH CORP83 citations98
US7667218B2Feb 23, 2010
Semiconductor integrated circuit device and method of manufacturing the same
RENESAS TECH CORP19 citations93
US7443721B2Oct 28, 2008
Semiconductor integrated device
RENESAS TECH CORP39 citations93
US7206216B2Apr 17, 2007
Semiconductor device with a non-erasable memory and/or a nonvolatile memory
RENESAS TECH CORP33 citations93
US7098478B2Aug 29, 2006
Semiconductor memory device using vertical-channel transistors
RENESAS TECH CORP33 citations93
US7796426B2Sep 14, 2010
Semiconductor device
RENESAS TECH CORP16 citations84
US7638786B2Dec 29, 2009
Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface
RENESAS TECH CORP12 citations84
US6943373B2Sep 13, 2005
Semiconductor memory device using vertical-channel transistors
RENESAS TECH CORP9 citations74
US7507985B2Mar 24, 2009
Phase change memory and phase change recording medium
RENESAS TECH CORP2 citations63
US7385838B2Jun 10, 2008
Semiconductor device with a non-erasable memory and/or a nonvolatile memory
RENESAS TECH CORP5 citations63
RENESAS ELECTRONICS CORP
4 patentsUS7864568B2Jan 4, 2011
Semiconductor storage device
RENESAS ELECTRONICS CORP222 citations99
US8000126B2Aug 16, 2011
Semiconductor device with recording layer containing indium, germanium, antimony and tellurium
RENESAS ELECTRONICS CORP12 citations84
US7859896B2Dec 28, 2010
Semiconductor device
RENESAS ELECTRONICS CORP18 citations84
US7834337B2Nov 16, 2010
Memory device
RENESAS ELECTRONICS CORP8 citations84