Inventor

SHIN YU-GYUN

KR67 patents

⚠️ This page may combine multiple inventors who share the name “SHIN YU-GYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHIN YU-GYUN

SAMSUNG ELECTRONICS CO LTD

Method for forming a trench isolation structure in an integrated circuit

High dielectric film and related method of manufacture

Trench isolation methods utilizing composite oxide films

Methods of forming semiconductor device

Semiconductor device having fin transistor and planar transistor and associated methods of manufacture

Fin field effect transistor and method of manufacturing the same

Methods of forming trench-based isolation regions with reduced susceptibility to edge defects

Trench isolation method for semiconductor device

Method for forming a trench isolation in a semiconductor device

Annealing methods for forming isolation trenches

Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same

Method of fabricating semiconductor device having dual gate

Method of manufacturing a stacked semiconductor device

Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure

Methods of manufacturing fin type field effect transistors

Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices

Method of manufacturing a semiconductor device having a dual gate structure

Methods of fabricating oxide layers by plasma nitridation and oxidation

Fin field effect transistor and method of fabricating the same

Fin field effect transistor and method of manufacturing the same

Method of forming isolation film for semiconductor devices

Isolation method of semiconductor device using second pad oxide layer formed through chemical vapor deposition (CVD)

CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device

CMOS transistor and method of manufacturing the same

Method of fabricating semiconductor device having dual gate

Method for fabricating a semiconductor device

MOSFET formed on a strained silicon layer

Methods of laterally forming single crystalline thin film regions from seed layers

Low temperature methods of etching semiconductor substrates

Methods of manufacturing semiconductor devices having single crystalline silicon layers

Epitaxial crystal growth process in the manufacturing of a semiconductor device

Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer

Semiconductor devices having transistors with different gate structures and methods of fabricating the same

Semiconductor device having metal gate patterns and related method of manufacture

Method for manufacturing a silicon structure

Semiconductor device including carrier accumulation layers

Semiconductor transistors having surface insulation layers and methods of fabricating such transistors

Sputtering target and semiconductor device manufactured using the same

Method of increasing a free carrier concentration in a semiconductor substrate

Method of manufacturing semiconductor device

Methods of fabricating semiconductor devices having transistors with different gate structures

Method of forming a MOSFET on a strained silicon layer

Method(s) of forming a thin layer

SAMSUNG ELECTRONICS CO INC

Methods of forming an oxide layer in a transistor having a recessed gate

NA HOON-JOO

Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials

LEE HYE-LAN

CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device

PARK TAI-SU

Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices

LEE BYUNG-HAK

Semiconductor device and method of fabricating the same

KIM JIN-BUM

Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method

SON YONG-HOON

Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the same