Inventor
YOON HONG-SIK
KR24 patents
⚠️ This page may combine multiple inventors who share the name “YOON HONG-SIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS7368788B2May 6, 2008
SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions
SAMSUNG ELECTRONICS CO LTD33 citations91
US7338862B2Mar 4, 2008
Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure
SAMSUNG ELECTRONICS CO LTD40 citations91
US8039919B2Oct 18, 2011
Memory devices having a carbon nanotube
SAMSUNG ELECTRONICS CO LTD13 citations83
US7982318B2Jul 19, 2011
Device including contact structure and method of forming the same
SAMSUNG ELECTRONICS CO LTD14 citations82
US7384841B2Jun 10, 2008
DRAM device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US8007875B2Aug 30, 2011
Method of forming a carbon nano-tube
SAMSUNG ELECTRONICS CO LTD2 citations62
US7795659B2Sep 14, 2010
DRAM device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US7585718B2Sep 8, 2009
Method of manufacturing a carbon nano-tube transistor
SAMSUNG ELECTRONICS CO LTD2 citations61
US7877865B2Feb 1, 2011
Method of forming a wiring having carbon nanotube
SAMSUNG ELECTRONICS CO LTD1 citations52
US7535778B2May 19, 2009
Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10141427B2Nov 27, 2018
Methods of manufacturing semiconductor devices including gate pattern, multi-channel active pattern and diffusion layer
SAMSUNG ELECTRONICS CO LTD0 citations51
US8604551B2Dec 10, 2013
Semiconductor device including trenches having particular structures
SAMSUNG ELECTRONICS CO LTD1 citations51
US8358527B2Jan 22, 2013
Multi-level nonvolatile memory devices using variable resistive elements
SAMSUNG ELECTRONICS CO LTD0 citations51
US7550791B2Jun 23, 2009
Transistor and its method of manufacture
SAMSUNG ELECTRONICS CO LTD0 citations51
LG DISPLAY CO LTD
3 patentsUS11895915B2Feb 6, 2024
Organic light emitting diode and organic light emitting device having the same
LG DISPLAY CO LTD1 citations61
US11683982B2Jun 20, 2023
Organic compound having excellent thermal resistance property and luminescent property, organic light emitting diode and organic light emitting device having the compound
LG DISPLAY CO LTD0 citations50
US11588113B2Feb 21, 2023
Organic light emitting diode and organic light emitting device having the same
LG DISPLAY CO LTD0 citations50
HUO ZONG-LIANG
2 patentsUS8084316B2Dec 27, 2011
Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structures
HUO ZONG-LIANG18 citations90
US8405137B2Mar 26, 2013
Single transistor floating-body DRAM devices having vertical channel transistor structures
HUO ZONG-LIANG3 citations60