Inventor

KIM JONG MUN

US22 patents

⚠️ This page may combine multiple inventors who share the name “KIM JONG MUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM JONG MUN

APPLIED MATERIALS INC

Methods for etching materials using synchronized RF pulses

Halogen-free amorphous carbon mask etch having high selectivity to photoresist

Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors

Etching oxide-nitride stacks using C4F6H2

Spin-orbit torque MRAM structure and manufacture thereof

Spin-orbit torque MRAM structure and manufacture thereof

Damage free metal conductor formation

Methods for etching a structure for MRAM applications

Residual removal

Method of etching copper indium gallium selenide (CIGS) material

Damage free metal conductor formation

Carbon layer covered mask in 3D applications

Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchants

Maintaining mask integrity to form openings in wafers

Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchants

Methods of patterning nickel silicide layers on a semiconductor device

Plasma etch processes for opening mask layers

KIM JONG MUN

Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone

Plasma etch processes for boron-doped carbonaceous mask layers

DOAN KENNY LINH

Boron-doped carbon-based hardmask etch processing

Method for etching substrate

SHIMIZU DAISUKE

Maintaining mask integrity to form openings in wafers